MRF377HR5 Allicdata Electronics
Allicdata Part #:

MRF377HR5-ND

Manufacturer Part#:

MRF377HR5

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: FET RF 65V 860MHZ
More Detail: RF Mosfet LDMOS 32V 2A 860MHz 18.2dB 45W NI-860C3
DataSheet: MRF377HR5 datasheetMRF377HR5 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 860MHz
Gain: 18.2dB
Voltage - Test: 32V
Current Rating: --
Noise Figure: --
Current - Test: 2A
Power - Output: 45W
Voltage - Rated: 65V
Package / Case: NI-860C3
Supplier Device Package: NI-860C3
Description

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When it comes to transistors such as Field-Effect Transistors (FETs), Metal-Oxide Semiconductor FETs (MOSFETs) and RF, one of the most popular ones is the RF MOSFET, the MRF377HR5. This device has been around for quite some time and is still used in a wide range of applications and high-frequency designs. In this article, we\'ll take a look at what makes the MRF377HR5 special, what its application and working principle are, and why it has been popular for such a long time.

The MRF377HR5 is a 25Wsurface-mount MOSFET, designed for high-frequency operation. It was first introduced by Motorola in 1993 and is one of the first reliable surface-mount MOSFETs to be used in high-frequency applications. The device has a wide range of capabilities, including an input voltage range of 0-8 volts, an operating frequency range of 50-1000 MHz, and a wide range of drain currents between 20 uA and 6 A. This makes it suitable for a wide range of applications, from low noise amplifiers and mixers, to high voltage switching applications. The device is also capable of handling high-frequency switching with very low transition times and power dissipation.

When it comes to the MRF377HR5\'s application, it is most commonly used in a variety of RF circuits and systems, including RF amplifiers, transmitters and receivers, modulators, oscillators, and other high-frequency designs. The device is also useful in other high-frequency duties, such as frequency synthesizers and PLLs, due to its high speed. Other popular applications include voltage-controlled oscillators (VCOs), low-noise amplifiers (LNAs) and mixers, and power amplifiers.

As far as the MRF377HR5\'s working principle is concerned, it is based on the principle of MOSFET operation. The device functions by using an electric charge to create a voltage difference across two source regions, known as the source and drain. When a voltage is applied to the gate, electrons flow from the source to the drain through a channel created in the oxide layer between them. The gate voltage controls the flow of current between the source and drain, and this change in current is what allows the device to control the output voltage.

The MRF377HR5\'s power ratings make it suitable for a wide range of high-frequency applications. Its exceptional speed, high input impedance, and low power dissipation make it a favorite choice among engineers designing high-frequency applications. The device is also robust and reliable, providing a high level of performance when handling high-frequency applications.

The MRF377HR5 has been around since 1993, and since then, it has continued to be one of the most popular MOSFETs on the market. Its wide range of capabilities, excellent power ratings, and robust performance make it a favorite choice for high-frequency applications.

The specific data is subject to PDF, and the above content is for reference

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