Allicdata Part #: | MRF372R3-ND |
Manufacturer Part#: |
MRF372R3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 68V 863MHZ NI-860C3 |
More Detail: | RF Mosfet LDMOS 32V 800mA 857MHz ~ 863MHz 17dB 180... |
DataSheet: | MRF372R3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 857MHz ~ 863MHz |
Gain: | 17dB |
Voltage - Test: | 32V |
Current Rating: | 17A |
Noise Figure: | -- |
Current - Test: | 800mA |
Power - Output: | 180W |
Voltage - Rated: | 68V |
Package / Case: | NI-860C3 |
Supplier Device Package: | NI-860C3 |
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The MRF372R3 is a silicon N-Channel Exponential RF Power Field-Effect Transistor that is part of the RF family of devices offered by Motorola. For this reason, the MRF372R3 can be used in a variety of different fields, including RF wireless communication, RF power level transmitter applications, and general purpose RF power amplification. In addition, the MRF372R3 can also be used in radio communication systems, radio wave amplitude processing, and frequency stage amplifiers.
The MRF372R3 is designed to operate in a frequency band of 0.5 GHz to 2.5 GHz and is designed for Class C and A/B type operation. This makes it ideal for applications such as microwave digital radio, industrial and scientific instrumentation, and radar amplifiers. In addition, the MRF372R3 is capable of high power operation of up to 400 W when the supply voltage is 20 volts. The device also has a gain of 19 dB, with a power gain flattening of 5.5 dB. This helps to ensure that the RF signal is stable and that it is not distorted.
When it comes to the working principle of the MRF372R3, it is based on a typical N-Channel FET design, which works on the principle of a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor). This means that the device is designed to be a power device and is designed to work with very low voltage devices. The N-Channel FET works by controlling the voltage, current and power between the source and the drain of the device. This is achieved by the gate-source voltage VGS, which controls the flow of electrons through the channel. This is then used to manipulate the output current, which is used to amplify an RF signal.
The MRF372R3 is capable of providing a relatively high level of power, which makes it an ideal choice for RF applications as it can be used to achieve high power levels without a large increase in power consumption. This is because the device has a high transconductance and output impedance, making it well suited for applications that require high levels of power. In addition, the device has a low thermal resistance, allowing it to operate at lower temperatures.
Overall, the MRF372R3 is a highly versatile device and is suitable for a wide variety of RF applications. It can be used in both Class C and A/B type operations, as well as providing a stable and reliable output. The device also has a relatively high level of power, enabling it to be used alongside other devices such as signal amplifiers to further improve its performance. As such, the MRF372R3 is well suited for a wide range of radio communication, industrial, scientific and radar applications.
The specific data is subject to PDF, and the above content is for reference
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