MT47H128M16RT-25E IT:C Allicdata Electronics
Allicdata Part #:

557-1623-ND

Manufacturer Part#:

MT47H128M16RT-25E IT:C

Price: $ 19.59
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 2G PARALLEL 84FBGA
More Detail: SDRAM - DDR2 Memory IC 2Gb (128M x 16) Parallel 40...
DataSheet: MT47H128M16RT-25E IT:C datasheetMT47H128M16RT-25E IT:C Datasheet/PDF
Quantity: 2549
1 +: $ 17.80380
Stock 2549Can Ship Immediately
$ 19.59
Specifications
Write Cycle Time - Word, Page: 15ns
Base Part Number: MT47H128M16
Supplier Device Package: 84-FBGA (9x12.5)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.7 V ~ 1.9 V
Memory Interface: Parallel
Access Time: 400ps
Series: --
Clock Frequency: 400MHz
Memory Size: 2Gb (128M x 16)
Technology: SDRAM - DDR2
Memory Format: DRAM
Memory Type: Volatile
Part Status: Active
Packaging: Tray 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MT47H128M16RT-25E IT:C is a type of semiconductor memory. The full name is Mobile-LL DDR2 SDRAM (Synchronous Dynamic Random Access Memory). It’s primary application field and working principle are as follows:

MT47H128M16RT-25E IT:C is used in a variety of applications that require high-capacity, high-speed memory. It is used in consumer electronics, mobile computing, automotive and industrial markets. It is also used in embedded applications such as mobile phones, tablets, game consoles, and digital signage. Additionally, MT47H128M16RT-25E IT:C is used in the storage of audio and video files, as well as data backups.

MT47H128M16RT-25E IT:C is a type of synchronous dynamic random-access memory, or SDRAM. This type of memory is composed of memory cells connected to a single line of data and read/write logic chips. SDRAM technology offers higher speed and lower power consumption compared to other types of memory, such as DRAM. The memory cells are connected to the data line using a circuit called “Row Decoders”, which allows the data to be written to or read from different rows of the memory array. In addition, the cells have a row where data can be stored and accessed randomly.

Another type of memory employed in MT47H128M16RT-25E IT:C is called “Column Decoders”, which also plays an important role in the operation of the memory. Column Decoders allow for data to be read and written to different columns of the memory cells. By using a combination of row and column decoders, MT47H128M16RT-25E IT:C is able to achieve greater speeds and lower power consumption than other memory types.

MT47H128M16RT-25E IT:C also incorporates Error-Correcting-Code (ECC) Technology. This allows the memory cells to detect and correct any errors that may occur while writing or reading data. This technology allows for reliable operation of the memory and helps to ensure the accuracy and security of data stored.

MT47H128M16RT-25E IT:C is also able to offer higher memory densities compared to other types of memory. By using a single data line and memory cells, MT47H128M16RT-25E IT:C is able to store larger amounts of data in a smaller area. This makes it an ideal solution for applications that require a large amount of storage.

Overall, MT47H128M16RT-25E IT:C is a high-capacity, high-speed, low-power memory solution that is ideal for a variety of applications. It’s Row and Column Decoders help to achieve greater speeds and lower power consumption as well as increased reliability. Additionally, its ECC technology helps to ensure data accuracy and security. All this makes MT47H128M16RT-25E IT:C a great choice for applications that require high-capacity, high-speed memory.

The specific data is subject to PDF, and the above content is for reference

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