MT47H64M8B6-25E L:D TR

Introduction

The MT47H64M8B6-25E L:D TR memory is a DRAM that offers high performance and power efficiency. It is a 64Mb (8 Meg x 8 bits) component that is optimised for small form factor portable devices, such as smartphones and tablets. It offers a range of advanced features such as burst read, write compensation and enhanced power standby modes for low power consumption. The DRAM also supports JEDEC Double Data Rate 2 (DDR2) clock speeds of up to 1600MHz and SDRAM clock speeds up to 800MHz.

Application Field

The MT47H64M8B6-25E L:D TR memory is designed with portability in mind. It offers high speed performance, low power consumption and low signal density with its 50% smaller component size. It can be used in a wide range of applications, such as portable media players, digital cameras, personal digital assistants (PDAs), GPS navigation devices, portable gaming consoles and other similar devices.

It can also be used in enterprise server applications, such as web and database servers. With a large memory capacity and a high speed data transfer rate, it is well suited for these applications.

In addition, the MT47H64M8B6-25E L:D TR memory can also be used in networking and communication equipment. It is ideal for this application, as it offers high bandwidth and low power consumption.

Working Principle

The MT47H64M8B6-25E L:D TR memory is based on Double Data Rate 2 (DDR2) SDRAM technology. It is designed to read and write both data (in the form of bits) and addresses (in the form of rows and columns).

The memory is organised in banks, each with a size of 8 megabits (8MB). The memory controller accesses data in each bank by sending out a request with a column address, followed by a row address. The controller then reads the data from the selected row and column address.

The controller can also write data to the memory, by first sending out a write enable signal, followed by the data, then the selected column and row addresses. The write data is then stored in the selected row and column.

The memory controller can also perform a burst read, which can dramatically improve the performance of the memory. A burst read is when the controller requests a block of data from the memory, rather than just a single piece of data. This can greatly speed up data access, as the controller does not have to send out separate requests for each piece of data.

In addition, the memory also offers power saving features, such as standby and power down modes. These allow the memory to enter a low power state when less activity is detected, significantly reducing power consumption.

Conclusion

The MT47H64M8B6-25E L:D TR memory is an advanced DRAM designed for high performance and low power consumption. It can be used in a wide range of applications, such as portable media players, enterprise servers and networking and communication equipment. Its advanced features, such as write compensation, burst read and enhanced power saving modes make it an ideal choice for these applications.