MT47H32M16CC-37E IT:B

Write Cycle Time - Word, Page:	15ns
Base Part Number:	MT47H32M16
Supplier Device Package:	84-FBGA (12x12.5)
Package / Case:	84-TFBGA
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 95°C (TC)
Voltage - Supply:	1.7 V ~ 1.9 V
Memory Interface:	Parallel
Access Time:	500ps
Series:	--
Clock Frequency:	267MHz
Memory Size:	512Mb (32M x 16)
Technology:	SDRAM - DDR2
Memory Format:	DRAM
Memory Type:	Volatile
Part Status:	Obsolete
Packaging:	Tray

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Introduction to MT47H32M16CC-37E IT:B
MT47H32M16CC-37E IT:B, designed and produced by Micron Technology, is a memory module. It is among the latest, most advanced and competitive technologies available in the market. Micron produces a variety of memory modules with varying speeds, sizes and features to meet the needs of the customer. This memory module is a one-gigabit DRAM and is often used in high-end servers, workstations and mission-critical applications.

Application Field of MT47H32M16CC-37E IT:B
MT47H32M16CC-37E IT:B is suitable for various applications due to its high performance, low power consumption and memory density. This memory module is ideal for gaming laptops, as it provides fast access to game data and video streaming. It is also suitable for enterprise-level data centers and storage systems to handle large amounts of data. Its speed and capacity make it suitable for advanced data centers, websites, and other applications that require fast, high-capacity storage. It is also suitable for graphics-intensive applications such as video editing, streaming and display. In addition, its low power consumption provides a cost-effective solution compared to traditional storage technologies.

Working principle of MT47H32M16CC-37E IT:B
MT47H32M16CC-37E IT:B works by permanently storing data in its memory cells. A memory cell is a group of physical elements that store data in a non-volatile form. A memory cell can be either a CMOS (Static RAM) or a dynamic RAM (DRAM) type. Static RAM stores the data in blocks, while dynamic RAM can be used to store bits of data. This type of memory module is usually used in computers and other digital devices.

The MT47H32M16CC-37E IT:B module\'s working principle is based on a memory cell array. The memory cells are arranged in an array structure and each memory cell is connected to an address bus, data bus and control bus. The data bus transfers data between the memory cells and the processor, while the address bus reads and writes addresses on the memory cells. The control bus sends signals for controlling the memory cell array.

The basic operations of a memory cell include reading, writing, refreshing and erasing. Reading is the process of retrieving data from the memory cells. Writing is the process of storing data in the memory cells. Refreshing is the process of resetting the memory cells and erasing is the process of removing data from the memory cells. A memory cell array is used to store and retrieve data.

The MT47H32M16CC-37E IT:B also uses data integrity, error correction, and data protection techniques to ensure the reliability of data storage. Data integrity is the process of verifying data accuracy. Error correction is the process of fixing invalid or corrupt data. Data protection is the process of protecting data from unauthorized access or damage. This memory module also uses a sleep mode to conserve power and improve system performance.

Conclusion
MT47H32M16CC-37E IT:B is a memory module designed and produced by Micron Technology for high-end servers, workstations and mission-critical applications. This memory module provides fast, high-capacity storage and consumes little power. It supports various applications, including gaming laptops, data centers, websites, graphics-intensive applications, and other applications that require fast, high-capacity storage. The working principle of this memory module is based on the memory cells, which are managed by an address bus, data bus and control bus. This memory module also features data integrity, error correction, and data protection to ensure the reliability of data storage.

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