Allicdata Part #: | 557-1340-2-ND |
Manufacturer Part#: |
MT47H256M4HQ-3:E TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 1G PARALLEL 60FBGA |
More Detail: | SDRAM - DDR2 Memory IC 1Gb (256M x 4) Parallel 333... |
DataSheet: | MT47H256M4HQ-3:E TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Write Cycle Time - Word, Page: | 15ns |
Base Part Number: | MT47H256M4 |
Supplier Device Package: | 60-FBGA (8x11.5) |
Package / Case: | 60-FBGA |
Mounting Type: | Surface Mount |
Operating Temperature: | 0°C ~ 85°C (TC) |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Memory Interface: | Parallel |
Access Time: | 450ps |
Series: | -- |
Clock Frequency: | 333MHz |
Memory Size: | 1Gb (256M x 4) |
Technology: | SDRAM - DDR2 |
Memory Format: | DRAM |
Memory Type: | Volatile |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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Introduction to Memory
Memory is an integral part of all modern computer systems. It is essentially responsible for storing information and data, as well as allowing access to applications. Without memory, computers would be unable to function properly and it is consequently referred to as "volatile" memory. This means that the data stored within it will be lost if power is not applied to the system.
Application of MT47H256M4HQ-3:E
The MT47H256M4HQ-3:E is part of a family of memory product solutions from Micron Technology. It is used in computer systems and devices, as well as electronic applications. This type of memory is available as an SODIMM or as an M.2 socket-compatible module, so it is suitable for a wide variety of device applications. It is also suitable for applications that require high-speed access, making it perfect for devices that need to access and store large amounts of data quickly.
The MT47H256M4HQ-3:E employs on-die error correcting code (ECC) to eliminate errors and reduce latency. This ECC technology is designed to be used in enterprise-level systems, and is remarkably durable, making it reliable as well as fast and efficient.
Working Principle of MT47H256M4HQ-3:E
The MT47H256M4HQ-3:E is a dynamic random-access memory (DRAM) module. DRAM modules are comprised of memory cells, which are essentially capacitors designed to store electrical charges. Data is stored within the modules by way of a voltage level determined by the capacitance of the cells. When the module is powered on, the data is read from the cells in much the same way a hard disk is read, only much faster as no mechanical components are in use.
The MT47H256M4HQ-3:E can support a maximum speed of 2666Mbps. This is possible thanks to its four 256M x8 (bits) parts, 16 rank organization, and DDR3 interface. Additionally, the module has ECC support, which means that it is able to detect and correct any errors that may occur during data transfers.
Conclusion
The MT47H256M4HQ-3:E is a dynamic random-access memory module that is suitable for a wide variety of applications, including those that require high-speed access. Its on-die ECC feature enables it to detect and correct errors during data transfers. With its DDR3 interface and four 256M x8 (bits) parts, the module can support a maximum speed of 2666Mbps. This makes it a great solution for enterprise-level applications, as it is both reliable and fast.
The specific data is subject to PDF, and the above content is for reference
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MT47H32M16NF-25E IT:H TR | Micron Techn... | 3.24 $ | 2000 | IC DRAM 512M PARALLEL 84F... |
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MT47H256M8EB-25E:C | Micron Techn... | -- | 1773 | IC DRAM 2G PARALLEL 60FBG... |
MT47H32M16BN-5E:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H64M8B6-3:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT47H128M4B6-3:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT47H128M8HQ-3:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
MT47H256M4HQ-3:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
MT47H64M16HR-3:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
MT47H512M4THN-3:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
MT47H512M4THN-37E:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
MT47H128M8HQ-187E:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
MT47H256M4HQ-187E:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
MT47H64M8B6-25E L:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT47H128M8HQ-3:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
MT47H16M16BG-37E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 84F... |
MT47H16M16BG-3:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 84F... |
MT47H32M16BT-37E:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 92F... |
MT47H32M16BT-3:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 92F... |
MT47H32M8BP-37E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
MT47H32M8BP-3:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
MT47H128M8BT-3 L:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
MT47H128M8BT-37E L:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
MT47H128M8BT-5E L:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
MT47H16M16BG-37V:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 84F... |
MT47H32M16CC-37E IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H32M16CC-37E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H32M16CC-37E L:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H32M16CC-37E L:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H32M16CC-3E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H32M16CC-3E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H32M16CC-5E IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
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