Allicdata Part #: | 557-1440-1-ND |
Manufacturer Part#: |
MT47H128M8HQ-3:G TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 1G PARALLEL 60FBGA |
More Detail: | SDRAM - DDR2 Memory IC 1Gb (128M x 8) Parallel 333... |
DataSheet: | MT47H128M8HQ-3:G TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Write Cycle Time - Word, Page: | 15ns |
Base Part Number: | MT47H128M8 |
Supplier Device Package: | 60-FBGA (8x11.5) |
Package / Case: | 60-FBGA |
Mounting Type: | Surface Mount |
Operating Temperature: | 0°C ~ 85°C (TC) |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Memory Interface: | Parallel |
Access Time: | 450ps |
Series: | -- |
Clock Frequency: | 333MHz |
Memory Size: | 1Gb (128M x 8) |
Technology: | SDRAM - DDR2 |
Memory Format: | DRAM |
Memory Type: | Volatile |
Part Status: | Obsolete |
Packaging: | Cut Tape (CT) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MT47H128M8HQ-3:G TR is a type of memory that is commonly used in many different types of applications. It is a high-performance memory with a high read/write speed that is ideal for applications that require fast data processing and storage. This type of memory is designed to be used in high-performance systems that are used in fields such as aerospace, military, telecommunications, automotive, and medical.
The MT47H128M8HQ-3:G TR memory uses DRAM technology and has 128Mbits of storage capacity. It is available in two speeds, the lower is 150 ns and the higher is 120 ns. This provides the memory with high levels of performance and stability. It also has Error Correction Code (ECC) capabilities, which allows it to detect and correct any errors in the data. It is also designed to be used with PCI Express and USB interfaces, allowing it to be used with a variety of devices and applications.
The MT47H128M8HQ-3:G TR memory is designed for low-power operation, allowing for increased system performance. It is designed to be used in multi-processor systems, allowing for greater utilization of memory resources. It also has an integrated thermal protection system, which helps to protect the device from heat damage. Additionally, the MT47H128M8HQ-3:G TR also has features such as dual-channel operation, which allows for higher performance in applications that involve multiple memory devices.
The working principle behind the MT47H128M8HQ-3:G TR memory is quite simple. It stores data in a series of cells. Each cell can store up to 8 bits of data (1 byte). When the memory receives a request for data, it searches its cells for the requested data, and then returns it to the system. The memory also has built-in Error Correction Code (ECC) capabilities which allow it to detect any errors in the data, and correct them before they are passed on. This means that the memory can provide reliable data even in cases of poor signal quality or intensive usage.
In addition to its use in high-performance systems, the MT47H128M8HQ-3:G TR can also be used in consumer devices. Its high read/write speeds make it ideal for digital cameras, PDAs, mobile phones, MP3 players, and many other types of devices. It is also commonly used in gaming devices, providing faster load times and greater game stability. On the other hand, its low-power operation and ECC capabilities make it a good choice for low-power applications such as home automation systems and digital signage systems.
In conclusion, the MT47H128M8HQ-3:G TR is a high-performance memory that is designed for use in many different types of applications. Its high read/write speeds, low-power operation, ECC capabilities, and integrated thermal protection system makes it well-suited for use in consumer devices, high-performance systems, and low-power applications. It is a reliable, versatile memory that is capable of providing fast, accurate data for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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MT47H128M4BT-37E:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 92F... |
MT47H256M4HQ-5E:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
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MT47H32M16NF-25E IT:H TR | Micron Techn... | 3.24 $ | 2000 | IC DRAM 512M PARALLEL 84F... |
MT47H128M16RT-25E IT:C | Micron Techn... | 19.59 $ | 2549 | IC DRAM 2G PARALLEL 84FBG... |
MT47H256M8EB-25E IT:C | Micron Techn... | 19.59 $ | 1407 | IC DRAM 2G PARALLEL 60FBG... |
MT47H128M16RT-25E:C | Micron Techn... | -- | 8856 | IC DRAM 2G PARALLEL 84FBG... |
MT47H256M8EB-25E:C | Micron Techn... | -- | 1773 | IC DRAM 2G PARALLEL 60FBG... |
MT47H32M16BN-5E:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H64M8B6-3:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT47H128M4B6-3:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT47H128M8HQ-3:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
MT47H256M4HQ-3:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
MT47H64M16HR-3:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
MT47H512M4THN-3:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
MT47H512M4THN-37E:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
MT47H128M8HQ-187E:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
MT47H256M4HQ-187E:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
MT47H64M8B6-25E L:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT47H128M8HQ-3:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
MT47H16M16BG-37E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 84F... |
MT47H16M16BG-3:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 84F... |
MT47H32M16BT-37E:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 92F... |
MT47H32M16BT-3:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 92F... |
MT47H32M8BP-37E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
MT47H32M8BP-3:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
MT47H128M8BT-3 L:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
MT47H128M8BT-37E L:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
MT47H128M8BT-5E L:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
MT47H16M16BG-37V:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 84F... |
MT47H32M16CC-37E IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H32M16CC-37E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H32M16CC-37E L:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H32M16CC-37E L:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H32M16CC-3E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H32M16CC-3E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H32M16CC-5E IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H32M16CC-5E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
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