Allicdata Part #: | MT47H32M16CC-3E:B-ND |
Manufacturer Part#: |
MT47H32M16CC-3E:B |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 512M PARALLEL 84FBGA |
More Detail: | SDRAM - DDR2 Memory IC 512Mb (32M x 16) Parallel 3... |
DataSheet: | MT47H32M16CC-3E:B Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Write Cycle Time - Word, Page: | 15ns |
Base Part Number: | MT47H32M16 |
Supplier Device Package: | 84-FBGA (12x12.5) |
Package / Case: | 84-TFBGA |
Mounting Type: | Surface Mount |
Operating Temperature: | 0°C ~ 85°C (TC) |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Memory Interface: | Parallel |
Access Time: | 450ps |
Series: | -- |
Clock Frequency: | 333MHz |
Memory Size: | 512Mb (32M x 16) |
Technology: | SDRAM - DDR2 |
Memory Format: | DRAM |
Memory Type: | Volatile |
Part Status: | Obsolete |
Packaging: | Tray |
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The MT47H32M16CC-3E:B is a dynamic random access memory module (DRAM) designed and manufactured by Micron Technology. It is used in a wide variety of applications such as embedded memory solutions, personal computers, servers, storage systems, and more. Its working principle is that data is stored in a group of small integrated circuit (IC) cells called a memory cell array. Each cell contains two transistors, one of which is used to hold the data and the other is used to store the address of the data. When data is read from the memory cell array, the address is read first and then the data is read from the cell corresponding to that address. The MT47H32M16CC-3E:B is an amalgamation of very fast high-performance static RAM (SRAM) and DRAM. It is a 16-megabit component and is composed of sixteen 1-megabit (128 kilobyte) DRAM chips and eight 4-megabit SRAM chips. The SRAM chips provide extremely fast speed while the DRAM chips provide a large storage capacity. The MT47H32M16CC-3E:B has a number of features that make it a popular choice for memory solutions. It has a low power consumption, which makes it ideal for use in battery powered devices and other applications that require low power consumption. It has a fast write and read access time that enable high-speed data processing and transfer. It also has an error correction code (ECC) for correcting any error that may arise due to physical defects in the memory cells. The most important feature of the MT47H32M16CC-3E:B is its burst mode operation. This mode provides a high-speed transfer of data from the memory to the CPU with only two clock cycles. The first cycle is used to produce the address of the data and the second cycle is used to read out the data. The burst mode also allows the user to access more than one address location of DRAM simultaneously, which further increases efficiency.The MT47H32M16CC-3E:B is an ideal memory solution for applications such as embedded memory solutions, personal computers, servers, storage systems, and more. It is an affordable and reliable solution that can help users achieve the performance they need. With its low power consumption, fast write and read access time, and burst mode operation, the MT47H32M16CC-3E:B is one of the most popular memory solutions available.
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MT47H32M16NF-25E IT:H TR | Micron Techn... | 3.24 $ | 2000 | IC DRAM 512M PARALLEL 84F... |
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MT47H256M8EB-25E:C | Micron Techn... | -- | 1773 | IC DRAM 2G PARALLEL 60FBG... |
MT47H32M16BN-5E:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H64M8B6-3:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT47H128M4B6-3:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT47H128M8HQ-3:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
MT47H256M4HQ-3:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
MT47H64M16HR-3:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84FBG... |
MT47H512M4THN-3:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
MT47H512M4THN-37E:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 63FBG... |
MT47H128M8HQ-187E:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
MT47H256M4HQ-187E:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
MT47H64M8B6-25E L:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT47H128M8HQ-3:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60FBG... |
MT47H16M16BG-37E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 84F... |
MT47H16M16BG-3:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 84F... |
MT47H32M16BT-37E:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 92F... |
MT47H32M16BT-3:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 92F... |
MT47H32M8BP-37E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
MT47H32M8BP-3:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
MT47H128M8BT-3 L:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
MT47H128M8BT-37E L:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
MT47H128M8BT-5E L:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 92FBG... |
MT47H16M16BG-37V:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 84F... |
MT47H32M16CC-37E IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H32M16CC-37E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H32M16CC-37E L:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H32M16CC-37E L:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H32M16CC-3E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H32M16CC-3E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H32M16CC-5E IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
MT47H32M16CC-5E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 84F... |
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