MT47H16M16BG-3:B TR

Write Cycle Time - Word, Page:	15ns
Base Part Number:	MT47H16M16
Supplier Device Package:	84-FBGA (8x14)
Package / Case:	84-FBGA
Mounting Type:	Surface Mount
Operating Temperature:	0°C ~ 85°C (TC)
Voltage - Supply:	1.7 V ~ 1.9 V
Memory Interface:	Parallel
Access Time:	450ps
Series:	--
Clock Frequency:	333MHz
Memory Size:	256Mb (16M x 16)
Technology:	SDRAM - DDR2
Memory Format:	DRAM
Memory Type:	Volatile
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MT47H16M16BG-3:B TR application field and working principle

Memory has been integrated into most of our electronic devices in recent years, allowing us to store data and running applications on our smartphones, tablets and computers. One particular dynamic random access memory (DRAM) that is used in many of the devices is the MT47H16M16BG-3:B TR.The MT47H16M16BG-3:B TR is a DDR3 DRAM from Micron Technology, which is a leader in memory products. This DRAM is designed for a wide range of applications, from mobile and notebook applications, to gaming systems and servers. It has a high speed of 1600MHz and low static power consumption of 1.5 watts when operating at 1.35 volts.The MT47H16M16BG-3:B TR has a 16Mb density, making it ideal for systems requiring high-density memory such as servers and gaming systems. It offers a maximum of 8-roller 8 load-redundant bit line pre-shared by 8-roller resistor cells to increase signal stability and to reduce signal noise. This ensures reliable operation and a smooth transition between data patterns when switching between activities.The MT47H16M16BG-3:B TR provides high speeds, making it ideal for systems requiring a high speed of performance. It is designed to run at 1600MHz at 1.35 volts, and it can achieve speeds of up to 1866MHz when the voltage is increased to 1.5 volts.In terms of working principle, the MT47H16M16BG-3:B TR works similarly to other DRAMs. It consists of an array of cells, which are grouped into blocks. Each block contains a number of cells, which store data bits. When the system requests information from the memory, it sends an address to the memory, which is then translated into a row address and a column address. The row address is used to identify the block of cells containing the data bits, while the column address is used to indicate which cell or cells contain the information.Once a block of cells is identified, the memory uses a data-strobe signal to read the data bits from the cells. The data is then sent to the system, which processes it and stores it in the registers.The MT47H16M16BG-3:B TR is one of the most popular DRAMs on the market and it is used in a wide range of applications. It offers a combination of high-speed performance, low static power consumption, and a large storage capacity, making it an ideal option for various applications and devices.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description