MT47H32M8BP-37E:B TR

Memory is a very important element for the functioning of computers and other electronic devices. MT47H32M8BP-37E:B TR is a type of memory component designed and employed in various applications. This article will explain the application field and working principle of this component.

Application Field

The MT47H32M8BP-37E:B TR component is a type of dynamic random access memory (DRAM). It is a widely used memory component in the electronics industry. This component is mainly used in digital devices, such as laptops, desktop computers, mobile phones, digital cameras, digital video cameras, etc. Moreover, this component is also used in embedded devices and industrial control systems. This component is widely employed due to its affordability and large memory capacity.

Working Principle

The MT47H32M8BP-37E:B TR component is a synchronous dynamic random access (SDRAM) memory component. It performs read and write operations, which are synchronous with the system clock signal. In this component, information is stored in a row of cells. Each cell can store a single bit of data. When data is written to a cell, a signal is generated to activate the appropriate row. This signal is called the activate signal. This activate signal is generated by the SDRAM controller. Once the row is activated, the DRAM controller sends a signal called the read signal. This signal is used to retrieve data from the cell. The entire process is repeated in order to read and write data from the memory cell.

The read and write operations of the SDRAM component are synchronized with the system clock. This ensures that the memory component can transfer data in a fast and reliable manner. The MT47H32M8BP-37E:B TR component also features a burst length of eight (8) cycles, which ensures that it can transfer data efficiently. Furthermore, this component has an operating voltage of 3.3 volts and an input frequency of 133 MHz. Therefore, it can provide high performance data transfer capability.

In conclusion, the MT47H32M8BP-37E:B TR component is a type of dynamic random access memory (DRAM) component. It is a widely used memory component in the electronic industry due to its affordability and large memory capacity. This component can perform rapid read and write operations, which are synchronized with the system clock. Furthermore, it has an operating voltage of 3.3 volts and an input frequency of 133 MHz, providing high performance data transfer capability.