Allicdata Part #: | MUN2136T1OS-ND |
Manufacturer Part#: |
MUN2136T1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 230MW SC59 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | MUN2136T1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 100 kOhms |
Resistor - Emitter Base (R2): | 100 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 230mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SC-59 |
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The MUN2136T1 is a single pre-biased bipolar junction transistor (BJT) specifically designed for use in automotive applications. It has a high current capability of 1.5A and a breakdown voltage of 130V. The device is capable of handling high collector current while exhibiting excellent thermal stability, allowing for reliable performance over the long term.The MUN2136T1 has been designed specifically for the automotive industry, providing a reliable and efficient solution for high current applications. The device utilizes an integrated pre-biased collector current switch, allowing for rapid turn-on and reduced turn-off times. This enables the MUN2136T1 to operate at high switching frequencies and increases the system\'s overall efficiency.At its core, the MUN2136T1 utilizes a three-pin monolithic N-channel MOSFET structure. This configuration offers excellent thermal efficiency and a wide range of operating temperatures. The device\'s design also allows for the efficient use of a single power supply, reducing system complexity. The MUN2136T1 is capable of providing a high voltage gain with a low saturation voltage. This allows for improved system feedback control, increased response times, and improved signal integrity. The device also has a lower power consumption than similar BJTs, reducing power complexity.The MUN2136T1 is designed for use in a variety of automotive applications, such as engine control systems, ECUs, braking systems, and powertrain systems. It is capable of operating in temperatures ranging from -40℃ to +125℃, making it suitable for use in harsh environments. The device can also be used in DC and AC applications, offering flexibility for various automotive applications.In conclusion, the MUN2136T1 is a robust, efficient, and reliable single pre-biased bipolar junction transistor designed specifically for automotive applications. Its integrated pre-biased collector current switch provides rapid turn-on and reduced turn-off times, while its wide operating temperature range makes it suitable for use in a variety of automotive applications. The device\'s high voltage gain, low saturation voltage, and low power consumption make it an ideal solution for high power applications.
The specific data is subject to PDF, and the above content is for reference
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