MUN2241T1 Allicdata Electronics
Allicdata Part #:

MUN2241T1OS-ND

Manufacturer Part#:

MUN2241T1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS NPN 338MW SC59
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: MUN2241T1 datasheetMUN2241T1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 338mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59
Description

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The MUN2241T1 is an NPN pre-biased single transistor designed for use as an amplifier in consumer and industrial applications. This transistor has an operating range from room temperature to 150°C and a power dissipation of up to 500 mW. The MUN2241T1 can be used to amplify audio signals or provide signal conditioning for digital logic circuits.

The MUN2241T1 is an NPN bipolar junction transistor (BJT). The basic BJT structure consists of three layers of material: the base, the emitter and the collector. The operation of a BJT is based on the behavior of electrons and holes in a semiconductor material. In a NPN transistor, the base-emitter junction has a reverse-biased voltage on it and the base-collector junction has a forward-bias voltage (the base current). When a voltage is applied to the base, a current flows through the base and emitter, creating a large current flow between the emitter and collector. This amplified current flow is the key to the amplification of the signal.

The pre-bias circuit of the MUN2241T1 is designed to keep the transistor operating within its linear range. This pre-bias circuit keeps the transistor biased in its active region and keeps the collector voltage in its linear range even as the input signal is changing. This ensures that the collector current only varies when the base current changes due to changing conditions in the input signal.

The MUN2241T1 is designed for use over a wide range of bias conditions. The high current gain of the device, combined with its linear operation, make it ideal for use in amplifying audio signals or providing signal conditioning in digital logic circuits. With an operating temperature range of -25°C to +150°C, the device can also be used in high temperature industrial applications. The low power dissipation of the device also makes it well suited for use in battery powered devices.

The MUN2241T1 is a versatile device that can be used in a variety of applications. With its pre-biased structure and wide operating temperature range, the MUN2241T1 can be used to amplify audio signals or provide signal conditioning in digital logic circuits. It is also well suited for use in high temperature industrial applications, as well as in battery powered devices.

The specific data is subject to PDF, and the above content is for reference

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