MUN2130T1G Allicdata Electronics
Allicdata Part #:

MUN2130T1G-ND

Manufacturer Part#:

MUN2130T1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS PNP 230MW SC59
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: MUN2130T1G datasheetMUN2130T1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 230mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MUN2130T1G is a pre-biased, single bipolar junction transistor (BJT). It is manufactured by Toshiba and is part of their Digital Transistor lineup.

BJTs are commonly used in many types of electronic devices and circuits, and the MUN2130T1G is no different, making it a popular choice for a wide range of applications. Its features, such as its high current gain and low voltage drop, make it easier to build circuits that can be suitable for a range of conditions and accommodate many types of signals. Its wide operating range and good thermal resistance also make it an ideal choice for temperature-sensitive applications.

The MUN2130T1G can be used in a variety of applications, such as amplifiers, audio systems, switching circuits, instrumentation systems, power supplies, voltage regulators, and more. Its fast switching time and low input capacitance make it particularly well-suited for use in high-frequency circuits, such as radio transmitters and receivers. Its high current capability makes it useful for driving small motors, valves, and relays.

The MUN2130T1G is a NPN type BJT, meaning that it requires a positive voltage applied to its base in order to create a current flow between its collector and emitter terminals. When the base voltage is increased, the current flow increases, allowing for greater control over the output of the transistor.

The MUN2130T1G has a PNP counterpart, the MUN2230T1G, which operates in a similar manner, but with the opposite voltage applied to its base. In addition, the MUN2130T1G is pre-biased, meaning that it has an intrinsic base-emitter voltage of 0.6V, which provides improved thermal stability when operating at higher temperatures.

In addition to its typical BJT characteristics, the MUN2130T1G has a few advantages over other BJTs. The device is highly tolerant to extended periods of temperature variation, making it a great choice for temperature-sensitive circuits. It is also designed for surface-mount assembly, meaning that it takes up very little space in a circuit and can be easily soldered onto a circuit board.

The MUN2130T1G is a type of technology that is widely used in today’s electronic world. Its features, such as its fast switching time, low input capacitance, high current capability, and temperature tolerance, make it a popular choice for a variety of applications. Its pre-biased design ensures reliable operation even at higher temperatures, making it a great choice for temperature-sensitive applications.

The specific data is subject to PDF, and the above content is for reference

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