MUN2232T1G Allicdata Electronics
Allicdata Part #:

MUN2232T1GOSTR-ND

Manufacturer Part#:

MUN2232T1G

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS NPN 338MW SC59
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: MUN2232T1G datasheetMUN2232T1G Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.01906
6000 +: $ 0.01719
15000 +: $ 0.01495
30000 +: $ 0.01346
75000 +: $ 0.01196
150000 +: $ 0.00997
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Resistor - Emitter Base (R2): 4.7 kOhms
Base Part Number: MUN2232
Supplier Device Package: SC-59
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 338mW
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Series: --
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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MUN2232T1G is a pre-biased single transistor composed of NPN bipolar junction transistor (BJT). It is mainly used to drive relays, motors, contactors and other electronic components that require higher current than can be supported by microprocessors. The transistor is designed to provide improved power handling, thermal management, and reliability compared to non-biased transistors.MUN2232T1G has a relatively simple structure with three terminals. The collector-base junction and the emitter-base junction are both heavily doped. This condition is known as saturation. In the saturated region, the collector and emitter are essentially short-circuited, which allows for high current flow through the transistor. An external bias applied to the collector terminal reduces the current through the transistor and adds increased current control. The majority carrier charges will flow from the collector to the emitter. The advantages of the MUN2232T1G include power handling and superior thermal management. The power handling of the MUN2232T1G, when compared to non-biased BJTs, is improved due to the fact that it is already pre-biased. This reduces the amount of heat generated by the transistor, as much of the power dissipated will be dissipated by the collector-base junction, rather than by the emitter. This helps to reduce the electrical noise generated by the transistor, as the transistor will operate more efficiently at lower temperatures.The thermal management of the MUN2232T1G is also improved due to its pre-biased structure. The thermal resistance of the device is reduced, allowing the transistor to better dissipate heat. This can be seen in improved reliability and extend the life of the device even further.The MUN2232T1G pre-biased transistor is mainly used in relay and motor driver applications. It is also suitable for low-power switching applications such as solenoid valves, actuators, and various other control circuits. It is also used in optoelectronic applications, such as in LEDs and infrared receivers and transmitters.The MUN2232T1G is a very useful transistor for a variety of applications due to its improved power handling and thermal management. With its wide variety of uses, it is a great addition to any electronics project.

The specific data is subject to PDF, and the above content is for reference

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