
Allicdata Part #: | MUN2232T1GOSTR-ND |
Manufacturer Part#: |
MUN2232T1G |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 338MW SC59 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.01906 |
6000 +: | $ 0.01719 |
15000 +: | $ 0.01495 |
30000 +: | $ 0.01346 |
75000 +: | $ 0.01196 |
150000 +: | $ 0.00997 |
Specifications
Resistor - Emitter Base (R2): | 4.7 kOhms |
Base Part Number: | MUN2232 |
Supplier Device Package: | SC-59 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 338mW |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 15 @ 5mA, 10V |
Series: | -- |
Resistor - Base (R1): | 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
Description
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MUN2232T1G is a pre-biased single transistor composed of NPN bipolar junction transistor (BJT). It is mainly used to drive relays, motors, contactors and other electronic components that require higher current than can be supported by microprocessors. The transistor is designed to provide improved power handling, thermal management, and reliability compared to non-biased transistors.MUN2232T1G has a relatively simple structure with three terminals. The collector-base junction and the emitter-base junction are both heavily doped. This condition is known as saturation. In the saturated region, the collector and emitter are essentially short-circuited, which allows for high current flow through the transistor. An external bias applied to the collector terminal reduces the current through the transistor and adds increased current control. The majority carrier charges will flow from the collector to the emitter. The advantages of the MUN2232T1G include power handling and superior thermal management. The power handling of the MUN2232T1G, when compared to non-biased BJTs, is improved due to the fact that it is already pre-biased. This reduces the amount of heat generated by the transistor, as much of the power dissipated will be dissipated by the collector-base junction, rather than by the emitter. This helps to reduce the electrical noise generated by the transistor, as the transistor will operate more efficiently at lower temperatures.The thermal management of the MUN2232T1G is also improved due to its pre-biased structure. The thermal resistance of the device is reduced, allowing the transistor to better dissipate heat. This can be seen in improved reliability and extend the life of the device even further.The MUN2232T1G pre-biased transistor is mainly used in relay and motor driver applications. It is also suitable for low-power switching applications such as solenoid valves, actuators, and various other control circuits. It is also used in optoelectronic applications, such as in LEDs and infrared receivers and transmitters.The MUN2232T1G is a very useful transistor for a variety of applications due to its improved power handling and thermal management. With its wide variety of uses, it is a great addition to any electronics project.The specific data is subject to PDF, and the above content is for reference
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