MUN2133T1

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MUN2133T1 is a single pre-biased bipolar junction transistors (BJT) suited for high voltage, low current applications. It is used in a variety of applications from powering assemblies to enabling remote control applications. It is a reliable, cost effective, and easy to use device for a variety of applications.

The MUN2133T1 is available in two package forms: the TO-92 package is 5mm tall and 4mm wide, while the SOT-23 package is 2.65mm tall and 2.1mm wide. It has a total housing of 10.2mm2 and a maximum capacitance of 1.6pF.

It is a PNP BJT, with a breakdown voltage of 40V, and a maximum collector-emitter voltage of 30V. It has a maximum DC current gain at saturation of 600, and a maximum current gain at cut-off of 11. The maximum DC current gain at cut-off can be increased by raising the base current. A 6V forward base-emitter voltage is recommended for the TO-92 package, and an 8V forward base-emitter voltage is recommended for the SOT-23 package.

MUN2133T1 finds its application in DC power supplies, high frequency amplifiers and comparators, audio amplifiers, and switching circuits. It can also be used in voice-activated circuits, remote controllers, and detector circuits. Its low voltage and current requirements make it perfect for consumer electronics and wearable applications.

The MUN2133T1 can be found in a wide variety of consumer and industrial applications, due to its stability, low voltage requirements, and ease of use. It is a reliable, cost-effective, and reliable option for a variety of applications.

The working principle of a MUN2133T1 relies on its PNP structure, where one side of the transistor is positively connected to the collector, the other to the emitter, and the base is connected in between the two. The base current is the controlling factor for the total current flow through the transistor. When a voltage higher than the forward base-emitter voltage is applied, the transistor will be activated, allowing current flow between the collector and emitter. The more the base current, the more current allowed to flow through the collector and emitter.

To increase the output of the transistor, the collector-emitter voltage should be increased the base current. If it is increased too much, the transistor will be overheated and the current gain at cut-off may decrease. Similarly, decreasing the base current will cause the collector current to decrease, and the current gain at cut-off may decrease.

The MUN2133T1 is a reliable and easily configurable single pre-biased bipolar junction transistors (BJT) solution for a variety of high voltage, low current applications. It is available in two different packages, and has a maximum DC current gain at saturation of 600, and a maximum current gain at cut-off of 11. Its low voltage and current requirements, stability, and ease of use make it suitable for a variety of consumer and industrial applications.

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