MUN2113T1G

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The MUN2113T1G is a single, pre-biased, PNP, bipolar junction transistor (BJT) optimized for use in battery-powered applications. Its design is well suited for low power applications, and it offers the user tight control over current flow, low leakage, and fast switching. It is frequently paired with the NPN equivalent MUN2111T1G for use in dual stage logic circuits.

At the time of manufacture, the MUN2113T1G is pre-biased with a 5 volt gate voltage. This voltage is used as the reference voltage for the transistor and ensures that the transistor\'s gate will quickly open and close when the base current is properly controlled. The base current itself is controlled by the user-set collector voltage, and can range from 0.5mA to 8mA depending on the voltage applied.

The MUN2113T1G is a fast-switching BJT designed for applications requiring quick response times and low power consumption. It has a minimum switching time of 150ns, making it suitable for applications such as radio-frequency (RF) circuits, clocking signals, and sound amplifiers. The low power consumption of the MUN2113T1G also makes it appropriate for battery-powered applications. Its collector-base breakdown voltage of 40V and collector-emitter breakdown of 30V ensure reliable operation over a wide range of input voltages.

The MUN2113T1G\'s high common-base current gain of 100 allows for the use of small signal transistors in applications that require high current gains. Additionally, the well-controlled breakdown voltage of the transistor allows for the use of input signals with higher voltages. The well-controlled current gain also makes the MUN2113T1G suitable for applications in which small signals need to become larger signals, such as audio amplifiers and wave shaping circuits.

The MUN2113T1G can also be used as an amplification device, allowing for the transfer of low-level signals to higher levels in an efficient manner. This makes them particularly useful in audio applications, allowing for the amplification of small signals without the need for additional amplification components. The transistor is also well suited for mixed-signal applications, as it can handle both analog and digital signals.

In conclusion, the MUN2113T1G is a single, pre-biased, PNP, bipolar junction transistor designed for low power consumption, tight control over current flow, and fast switching. Its pre-biased voltage makes it suitable for battery-powered applications, and its common base current gain, collector-base and collector-emitter breakdown voltages, and fast switching times make it ideal for a variety of audio and mixed-signal applications. The user can easily control the transistor\'s performance with a bias voltage, and should choose the MUN2113T1G for applications requiring low power consumption, fast switching, and reliable performance.

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