Allicdata Part #: | MUN2235T1G-ND |
Manufacturer Part#: |
MUN2235T1G |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 338MW SC59 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | MUN2235T1G Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.01495 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 230mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | SC-59-3 |
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MUN2235T1G Application Field and Working Principle
The MUN2235T1G is a high-performance, single, pre-biased, NPN bipolar junction transistor (BJT). It is ideal for use in a variety of power amplifying and switching applications. The MUN2235T1G is ideal for use in off-line and AB linear amplifiers and audio amplifiers, power switching applications, and motor control applications.
Features of MUN2235T1G
- High DC current gain (hFE) of 40 to 300
- Very low noise current
- High power density
- Pre-biased operation
- Wide range of operating temperature (-55°C to 150°C)
- High current capability (1.63A max)
- Available in a wide variety of power packages
Application Field of MUN2235T1G
The MUN2235T1G is a pre-biased, single, NPN bipolar junction transistor that is designed to offer excellent performance in power amplifying or switching applications. The transistor is optimized for high efficiency and low power consumption, making it an ideal choice for use in a variety of off-line and AB linear amplifiers and audio amplifiers, power switching applications, and motor control applications. It is also suitable for switching power supplies, voltage regulators, and AC to DC converters.
Working Principle
The MUN2235T1G is a pre-biased, single, NPN bipolar junction transistor. It is a three-terminal device composed of an emitter, base, and collector that is connected together in order to achieve current amplification. The transistor consists of two PN junctions which are connected in reverse bias, with the base being the middle PN junction. When a voltage is applied to the base, a current flows from the emitter to the collector. This current flow is dependent on the voltage applied to the base. When this current flows through the transistor, it helps to amplify the current flowing through the emitter and the collector. This is made possible by the large current gain of the transistor, which is the ratio of the output current to the input current.
The MUN2235T1G is a pre-biased device, which means that it is designed to be used with a bias voltage applied to the base. A bias voltage is a small amount of voltage used to "turn on" the transistor, and it is usually applied in the form of a resistor. This bias voltage helps to regulate the current flowing through the transistor, ensuring that the output current remains within a specified range. The pre-biased design of the MUN2235T1G allows for a highly efficient operating range and stable current gain.
The MUN2235T1G is available in a wide variety of package types and power packages, making it ideal for use in various applications. The transistor is designed for reliability and offers excellent performance in a wide variety of power applications. The device operates over an extended temperature range and offers a high current capability, making it ideal for use in a variety of power amplifier and motor control applications.
The specific data is subject to PDF, and the above content is for reference
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