
Allicdata Part #: | MUN2132T1-ND |
Manufacturer Part#: |
MUN2132T1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 230MW SC59 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 15 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 230mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SC-59 |
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The MUN2132T1 is a type of bipolar junction transistor (BJT), primarily designed as a pre-biased single device. This type of transistor is widely used in communication applications such as mobile phones, as well as in automotive, consumer, industrial, and aerospace technology.
The MUN2132T1 is an NPN (Negative-Positive-Negative) type BJT, comprised of four terminals. It features very low power consumption, low saturation voltage, and an incredibly wide frequency range of up to 10 GHz. The device is rated for up to 45V, with a maximum peak power dissipation of 500mW.
The MUN2132T1 is a pre-biased transistor, meaning it can be turned on without the need for an external voltage source. This makes it an ideal choice for applications where it needs to be triggered immediately and on cue. This feature is particularly useful in applications that require a rapid response time and instantaneous switching.
The most notable benefit of the MUN2132T1 is its ability to maintain tight control over the current and voltage supplied to the device when used as an amplifier. This helps reduce the amount of heat generated, ultimately leading to a better overall performance. The device is capable of amplifying signals up to 18GHz, with gain-bandwidth product being higher than 35mV/decade.
The working principle of the MUN2132T1 transistor lies in its ability to create and control the flow of current. This flow is triggered by a switch-like effect, enabled by both the Base-Emitter and Collector-Emitter voltages. This switching enables the device to selectively enable and disable the flow of current, a function that is often used in communication applications.
The Asymmetric Input Structure of the MUN2132T1 also helps to offer better current-handling capabilities than standard transistors, as well as improved switching capabilities. Additionally, the two 4K pull-up resistors ensure that the Base-Emitter junction is never subjected to a voltage greater than the power supply voltage.
The MUN2132T1 is an incredibly versatile and reliable transistor, making it a popular choice among engineers. It can be used for a plethora of different applications, from linear amplifiers and TV receivers, to logic gates and automotive systems. The robust design of the device and its wide range of features is sure to make it a staple in the electronics industry.
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