Allicdata Part #: | MUN2240T1G-ND |
Manufacturer Part#: |
MUN2240T1G |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 338MW SC59 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | MUN2240T1G Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.01455 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 338mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SC-59 |
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MUN2240T1G is a pre-biased NPN switching transistor, belonging to the category of single Bipolar Junction Transistors (BJT). It is a three-layer structure with a collector, an emitter and a base; on the base layer, there are two resistors connected to the emitter. It is designed with a protection circuit to reduce the switching speed of the main switch, which provides a fast response time. The transistor also features a high current rating of up to 1A, making it suitable for applications requiring high current loads. Additionally, its low voltage requirements ensure that it can be used in very low power applications.
The application field for MUN2240T1G transistors is extremely versatile. They can be found in various electronics applications including radio antennas, automobiles, audio amplifiers, microcontrollers and voltage regulators. Due to their application versatility, these transistors are also used in various industrial applications including driving solenoid valves, actuators, relays and motors. Consequently, these transistors can be found in almost any electronics design.
The working principle of MUN2240T1G transistors is based on the NPN structure. The base acts as a voltage regulator, connecting the emitter and collector. When a voltage is applied to the base, current starts to flow from emitter to collector, which allows the collector to operate at a higher voltage than the emitter. This setup creates an active region between the two, which allows for switching signals to take place. In addition, an external resistance can be connected between base and emitter to protect the transistor from high voltage spikes.
The two resistors on the base of MUN2240T1G transistors provide a pre-biased effect, meaning that the voltage of the base already has some potential when no power is given. This helps to improve the response time of the transistor and protect it from high-powered spikes. This also helps to reduce the activation voltage of the external circuit, allowing the transistor to operate at a higher frequency. In addition, the pre-biased function ensures that the transistor is durable, which allows it to remain reliable even when used in harsh environments.
In summary, MUN2240T1G transistors are single BJT transistors with a pre-biased effect. They are versatile and suitable for a variety of electronics applications, from signal switching to actuators. Additionally, their protection circuit and pre-biased effect allows it to remain reliable in high-powered situations. These qualities make MUN2240T1G transistors a reliable choice for various applications.
The specific data is subject to PDF, and the above content is for reference
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