Allicdata Part #: | MUN2135T1G-ND |
Manufacturer Part#: |
MUN2135T1G |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 230MW SC59 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | MUN2135T1G Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.01495 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 230mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | SC-59-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
A MUN2135T1G pre-biased single transistor is an integrated device made up of transistors, resistors and capacitors that can be used in low power analog and digital applications. This type of transistor is designed to reduce the power consumption in the system while providing a controlled current flow, resulting in improved performance and better design flexibility. It also offers the advantage of being able to quickly switch from one state to another.
The MUN2135T1G transistor is a bipolar junction transistor (BJT). A BJT is made up of three components: the base, the emitter and the collector. The base of the transistor is connected to the input signal, while the emitter and collector are connected to the output. The transistor\'s action is determined by the difference in voltage between its collector and emitter. When a reverse voltage is applied to the base, current is able to flow through the transistor. This current flow is the determining factor in how the output of the transistor is affected.
The MUN2135T1G works on the principle of current pre-bias. In this configuration, the transistor is biased to allow for a predetermined current flow through it. This sets a static voltage across the base-emitter junction that does not change even when voltage is applied to the base. As a result, the transistor is always able to respond quickly to the input signal, and current is able to flow through it at a predictable rate. This ensures the output from the transistor is consistent, and allows for precision control over the current flow.
The MUN2135T1G belongs to the family of single pre-biased transistors and is designed to be used in a wide variety of applications. It is often used in low-power analog circuits such as amplifiers, comparators, oscillators and integrators. It is also frequently used in the development of micro controllers and digital systems. As a result, the MUN2135T1G is a popular choice among engineers in the field of semiconductor design.
In addition, due to its low power consumption and fast switching speeds, the MUN2135T1G is ideal for applications that require efficiency and accuracy. Examples include medical imaging systems, industrial sensors, LED drivers and power management systems. In each of these cases, the transistor can provide accurate control of the current flow, ensuring the device performs as expected.
Overall, the MUN2135T1G pre-biased single transistor is a versatile device that offers an array of benefits to engineers and developers in the semiconductor industry. It is capable of providing precise control over the current flow, and its fast switching speeds make it ideal for applications where efficiency and accuracy are crucial. Moreover, it is an effective solution for microcontrollers and digital devices due to its low power consumption and improved design flexibility.
The specific data is subject to PDF, and the above content is for reference
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