
Allicdata Part #: | MUN2211JT1-ND |
Manufacturer Part#: |
MUN2211JT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 2.7W SC59 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 230mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SC-59 |
Base Part Number: | MUN2211 |
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MUN2211JT1 is a type of single pre-biased transistor. It is classified as a bipolar junction transistor (BJT), which is essentially two diodes connected together. This transistor is highly reliable and designed for low-power, high-voltage applications, such as switching and level shifting.
Like all transistors, the MUN2211JT1 is comprised of three terminals: collector, emitter, and base. The collector and emitter form the main current path, while the base is often referred to as a control terminal and is responsible for controlling the flow of current between the collector and emitter. The base terminal can be connected to an external electrical signal, allowing the transistor to be used as an amplifier or switch.
The MUN2211JT1 is pre-biased, meaning it is already biased and ready to use. The bias is set by the application and can be adjusted as needed. This saves time and money during the manufacturing process by eliminating the need for components such as resistors and capacitors.
The operating principles of the MUN2211JT1 are similar to those of other types of transistors. When a current is applied to the base of the transistor, it creates a voltage difference across the collector and emitter. This voltage difference creates a current flow between the collector and emitter, and this current flow is amplified by the transistor, allowing it to be used as an amplifier or switch.
The MUN2211JT1 is especially useful for power systems applications due to its high-voltage and low-power capabilities. Examples of such applications include power distribution, motor control, lighting systems, motor speed monitoring and even controlling high-power electromagnets. The MUN2211JT1 is highly reliable and is also used in fabricating high-power and high-voltage circuits. As a result, it is commonly found in industrial, automotive, and even aerospace applications.
In summary, the MUN2211JT1 is a single pre-biased transistor that is designed for low-power, high-voltage applications. Its operating principles are similar to those of other transistors, and it is used in many different applications, including power distribution and motor control. The MUN2211JT1 is highly reliable and cost-effective, making it an attractive choice for many applications.
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