Allicdata Part #: | MUR810OS-ND |
Manufacturer Part#: |
MUR810 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 100V 8A TO220-2 |
More Detail: | Diode Standard 100V 8A Through Hole TO-220-2 |
DataSheet: | MUR810 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SWITCHMODE™ |
Packaging: | Tube |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 975mV @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 5µA @ 100V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220-2 |
Operating Temperature - Junction: | -65°C ~ 175°C |
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Diodes are a fundamental semiconductor device used in many applications as a semiconductor switch or a rectifier. The MUR810 is a medium-power, ultra-fast rectifying diode. It is often used in high-frequency circuit applications such as switching power supplies, frequency conversion, and EMI noise suppression. This article will discuss the application fields and working principle of the MUR810.
Application Field: The MUR810 is a diode intended for use in medium-power, high-frequency applications. It has a forward voltage of 1.2V and can support a maximum peak repetitive reverse voltage of 800V with a non-repetitive peak reverse voltage of 1000V. The MUR810 is designed to have a low reverse leakage current and a high surge overload current capability. It is often used in EMI noise suppression, frequency conversion, and switching power supplies.
Working Principle: The MUR810 is an ultrafast diode that functions by allowing electric current to flow in one direction. It is a unidirectional device that serves as a semiconductor switch in alternating current applications, or as a rectifier in direct current applications. The diode works by allowing electrons to flow in a single direction and blocking the flow of electrons in the opposite direction; this is known as rectification. The MUR810 is optimized for high-frequency applications. It has a high blocking voltage, a low forward voltage, and a low reverse leakage current which are important characteristics for rectification.
The MUR810 also has a high surge overload current capability which is important for applications such as inverters, converters, and switched-mode power supplies. Its low forward voltage reduces power dissipation, which increases efficiency and decreases heat generation. The MUR810 also features an ultrafast recovery time which is important for frequency conversion and EMI noise suppression.
In summary, the MUR810 is an ultrafast rectifying diode designed for use in medium-power, high-frequency applications such as EMI noise suppression, frequency conversion, and switching power supplies. It has a low reverse leakage current, a low forward voltage, and a high surge overload current capability. These characteristics make the MUR810 ideal for medium-power, high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
MUR840G | ON Semicondu... | 0.69 $ | 2760 | DIODE GEN PURP 400V 8A TO... |
MUR805G | ON Semicondu... | 0.64 $ | 650 | DIODE GEN PURP 50V 8A TO2... |
MUR860 C0G | Taiwan Semic... | 0.87 $ | 495 | DIODE GEN PURP 600V 8A TO... |
MUR810G | ON Semicondu... | 0.63 $ | 1725 | DIODE GEN PURP 100V 8A TO... |
MUR880EG | ON Semicondu... | 0.82 $ | 6384 | DIODE GEN PURP 800V 8A TO... |
MUR8100EG | ON Semicondu... | 0.82 $ | 15587 | DIODE GEN PURP 1KV 8A TO2... |
MUR8L60HC0G | Taiwan Semic... | 0.2 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
MUR820HC0G | Taiwan Semic... | 0.22 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
MUR840 C0G | Taiwan Semic... | 0.23 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
MUR840HC0G | Taiwan Semic... | 0.25 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
MUR8L60 C0G | Taiwan Semic... | 0.25 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
MUR820 C0G | Taiwan Semic... | 0.34 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
MUR860HC0G | Taiwan Semic... | 0.37 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
VS-MUR820-M3 | Vishay Semic... | 0.63 $ | 1000 | DIODE FRED 200V 8A TO220A... |
MUR820G | ON Semicondu... | 0.64 $ | 1750 | DIODE GEN PURP 200V 8A TO... |
MUR860G | ON Semicondu... | -- | 6303 | DIODE GEN PURP 600V 8A TO... |
MUR815G | ON Semicondu... | 0.62 $ | 2053 | DIODE GEN PURP 150V 8A TO... |
VS-MUR820PBF | Vishay Semic... | 0.9 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
VS-MUR820-N3 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
MUR820 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 8A TO... |
MUR815 | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
MUR880E | ON Semicondu... | -- | 1000 | DIODE GEN PURP 800V 8A TO... |
MUR810 | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
MUR860 | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
MUR840 | ON Semicondu... | -- | 1000 | DIODE GEN PURP 400V 8A TO... |
MUR8100E | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 8A TO2... |
MUR805 | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
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