Allicdata Part #: | MUR880EOS-ND |
Manufacturer Part#: |
MUR880E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 800V 8A TO220AC |
More Detail: | Diode Standard 800V 8A Through Hole TO-220AC |
DataSheet: | MUR880E Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | SWITCHMODE™ |
Packaging: | Tube |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.8V @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 100ns |
Current - Reverse Leakage @ Vr: | 25µA @ 800V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220AC |
Operating Temperature - Junction: | -65°C ~ 175°C |
Description
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Introduction
The MUR880E is a single rectifier diode for use in general purpose and high frequency applications. It features low reverse current leakage, excellent surge and avalanche capability, and high-voltage drop. The MUR880E is ideal for use in automotive, telecom and industrial applications.Application Field and Working Principle
The MUR880E is a single rectifier diode used in general purpose and high frequency applications. It is typically used in applications where low power dissipation, excellent surge and avalanche capability, and high-voltage drop are desired. It is well suited for use in automotive, telecommunications, and industrial applications.The MUR880E is a three-terminal diode. The diode consists of two main parts: an anode and a cathode. The anode is connected to the positive terminal of a power source, while the cathode is connected to the negative terminal. When voltage is applied to the anode, current will flow through the diode, while in the reverse direction, no current will flow. This phenomenon is known as rectification.The MUR880E is engineered to provide a low voltage drop and low reverse current leakage when used in applications such as half-wave and full-wave rectification, voltage-limiters, and surge withstanding circuits. It can withstand repetitive reverse voltage of up to 1.0kV and voltage surges of up to 400V.Features
The MUR880E is designed to provide several advantages over other rectifying diodes:1. Low Reverse Current Leakage: The MUR880E’s reverse current leakage is less than 0.0005mA, meaning it can be used in applications where static or dynamic currents must be kept to a minimum.2. High Voltage Drop: The MUR880E’s breakdown voltage is rated at 800V, which is higher than other rectifying diodes of the same type. This allows it to be used in applications where voltage drop needs to be kept to a minimum.3. Excellent Surge and Avalanche Protection: The MUR880E can withstand up to 400V surges and 1kV reverse voltage, ensuring it is capable of withstanding the most demanding environments.4. Temperature Resistant: The MUR880E is designed to operate in temperatures ranging from -40°C to +105°C without significant performance degradation.Conclusion
The MUR880E is an ideal solution for applications where low power dissipation, high-voltage drop and excellent surge and avalanche capability are desired. It is well suited for use in automotive, telecom and industrial applications. It offers a low voltage drop and low reverse current leakage, excellent surge and avalanche protection and can operate in temperatures ranging from -40°C to +105°C.The specific data is subject to PDF, and the above content is for reference
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MUR840G | ON Semicondu... | 0.69 $ | 2760 | DIODE GEN PURP 400V 8A TO... |
MUR805G | ON Semicondu... | 0.64 $ | 650 | DIODE GEN PURP 50V 8A TO2... |
MUR860 C0G | Taiwan Semic... | 0.87 $ | 495 | DIODE GEN PURP 600V 8A TO... |
MUR810G | ON Semicondu... | 0.63 $ | 1725 | DIODE GEN PURP 100V 8A TO... |
MUR880EG | ON Semicondu... | 0.82 $ | 6384 | DIODE GEN PURP 800V 8A TO... |
MUR8100EG | ON Semicondu... | 0.82 $ | 15587 | DIODE GEN PURP 1KV 8A TO2... |
MUR8L60HC0G | Taiwan Semic... | 0.2 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
MUR820HC0G | Taiwan Semic... | 0.22 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
MUR840 C0G | Taiwan Semic... | 0.23 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
MUR840HC0G | Taiwan Semic... | 0.25 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
MUR8L60 C0G | Taiwan Semic... | 0.25 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
MUR820 C0G | Taiwan Semic... | 0.34 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
MUR860HC0G | Taiwan Semic... | 0.37 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
VS-MUR820-M3 | Vishay Semic... | 0.63 $ | 1000 | DIODE FRED 200V 8A TO220A... |
MUR820G | ON Semicondu... | 0.64 $ | 1750 | DIODE GEN PURP 200V 8A TO... |
MUR860G | ON Semicondu... | -- | 6303 | DIODE GEN PURP 600V 8A TO... |
MUR815G | ON Semicondu... | 0.62 $ | 2053 | DIODE GEN PURP 150V 8A TO... |
VS-MUR820PBF | Vishay Semic... | 0.9 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
VS-MUR820-N3 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
MUR820 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 8A TO... |
MUR815 | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
MUR880E | ON Semicondu... | -- | 1000 | DIODE GEN PURP 800V 8A TO... |
MUR810 | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
MUR860 | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
MUR840 | ON Semicondu... | -- | 1000 | DIODE GEN PURP 400V 8A TO... |
MUR8100E | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 8A TO2... |
MUR805 | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
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