Allicdata Part #: | MUR860C0G-ND |
Manufacturer Part#: |
MUR860 C0G |
Price: | $ 0.87 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 600V 8A TO220AC |
More Detail: | Diode Standard 600V 8A Through Hole TO-220AC |
DataSheet: | MUR860 C0G Datasheet/PDF |
Quantity: | 495 |
1 +: | $ 0.78750 |
50 +: | $ 0.63164 |
100 +: | $ 0.55270 |
500 +: | $ 0.42863 |
1000 +: | $ 0.33839 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 5µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220AC |
Operating Temperature - Junction: | -55°C ~ 175°C |
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The MUR860 C0G is a diode that is commonly used in a myriad of applications and is known for its reliability and flexibility. It is a single rectifier with a voltage coefficient of ± 30 V/K and reverse current of 10 μA. This diode primarily works as a rectifier and is used in low- to medium-power applications, such as general rectification, voltage stabilization, power supply voltage protection, and reverse current protection.
The MUR860 C0G is designed to replace both discrete diodes and transistors in a wide range of applications, making it a popular choice for many engineers. The diode is made with a planar construction in order to provide low-inductance performance and low-impedance characteristics. It is also protected from reverse-bias voltages and can withstand temperatures up to 175 degrees Celsius.
The MUR860 C0G utilizes a PN junction made from silicon to create a turn-on and turn-off current. The PN junction allows for a rapid reverse-bias turn-on and slow turn-off cycle. This cycle is triggered when the voltage across the PN junction is increased beyond the avalanche breakdown voltage of the diode. Once turned on, the reverse current flowing through the crystal will remain until the forward voltage falls below the reverse-bias avalanche breakdown voltage. The reverse voltage can then be further reduced and the cycle can be repeated.
The MUR860 C0G is capable of handling a wide variety of applications, including surge suppression, power supplies, transient voltage protection, voltage clamping and snubber circuits. It is designed to operate over a wide range of temperatures, withstanding up to 175 degrees Celsius. The diode is also designed with low-inductance and low-impedance characteristics in order to provide high surge-suppression capability. The diode also features low reverse leakage current and capacitance, making it well-suited for high-frequency applications.
In addition, the MUR860 C0G is highly reliable and capable of withstanding harsh environmental conditions, including high-temperature operations, and is available in a variety of packages for optimized use in various applications. This diode is frequently used in power supplies, AC/DC converters, DC/DC converters and battery chargers, as well as automotive and industrial applications.
The MUR860 C0G is a versatile and reliable diode that is used in a wide variety of applications. It offers low-inductance, low-impedance performance, along with high surge-suppression capabilities and a high level of reliability. This diode is able to handle high temperatures and is usable in both discrete and transistor applications. It is a popular choice for many engineers and is available in a variety of packages.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
MUR840G | ON Semicondu... | 0.69 $ | 2760 | DIODE GEN PURP 400V 8A TO... |
MUR805G | ON Semicondu... | 0.64 $ | 650 | DIODE GEN PURP 50V 8A TO2... |
MUR860 C0G | Taiwan Semic... | 0.87 $ | 495 | DIODE GEN PURP 600V 8A TO... |
MUR810G | ON Semicondu... | 0.63 $ | 1725 | DIODE GEN PURP 100V 8A TO... |
MUR880EG | ON Semicondu... | 0.82 $ | 6384 | DIODE GEN PURP 800V 8A TO... |
MUR8100EG | ON Semicondu... | 0.82 $ | 15587 | DIODE GEN PURP 1KV 8A TO2... |
MUR8L60HC0G | Taiwan Semic... | 0.2 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
MUR820HC0G | Taiwan Semic... | 0.22 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
MUR840 C0G | Taiwan Semic... | 0.23 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
MUR840HC0G | Taiwan Semic... | 0.25 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
MUR8L60 C0G | Taiwan Semic... | 0.25 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
MUR820 C0G | Taiwan Semic... | 0.34 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
MUR860HC0G | Taiwan Semic... | 0.37 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
VS-MUR820-M3 | Vishay Semic... | 0.63 $ | 1000 | DIODE FRED 200V 8A TO220A... |
MUR820G | ON Semicondu... | 0.64 $ | 1750 | DIODE GEN PURP 200V 8A TO... |
MUR860G | ON Semicondu... | -- | 6303 | DIODE GEN PURP 600V 8A TO... |
MUR815G | ON Semicondu... | 0.62 $ | 2053 | DIODE GEN PURP 150V 8A TO... |
VS-MUR820PBF | Vishay Semic... | 0.9 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
VS-MUR820-N3 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
MUR820 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 8A TO... |
MUR815 | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
MUR880E | ON Semicondu... | -- | 1000 | DIODE GEN PURP 800V 8A TO... |
MUR810 | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
MUR860 | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
MUR840 | ON Semicondu... | -- | 1000 | DIODE GEN PURP 400V 8A TO... |
MUR8100E | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 8A TO2... |
MUR805 | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
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