Allicdata Part #: | MUR820GOS-ND |
Manufacturer Part#: |
MUR820G |
Price: | $ 0.64 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 200V 8A TO220AC |
More Detail: | Diode Standard 200V 8A Through Hole TO-220AC |
DataSheet: | MUR820G Datasheet/PDF |
Quantity: | 1750 |
1 +: | $ 0.57960 |
50 +: | $ 0.47918 |
100 +: | $ 0.39110 |
500 +: | $ 0.30919 |
1000 +: | $ 0.24735 |
Series: | SWITCHMODE™ |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 975mV @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 5µA @ 200V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220AC |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | MUR820 |
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The MUR820G is a rectifying diode, mainly used in the field of on-state rectification and diode freewheeling. The device belongs to the category of single diodes and rectifiers. It is commonly used to provide a path for current in one direction while blocking the current in the opposite direction.
The MUR820G is a silicon-based device with an efficient hardness interface, that is capable of withstanding high temperature levels up to 150°C. This makes it suitable for applications in demanding ambient conditions. The MUR820G features an integral fast-recovery characteristic, enabling it to efficiently reverse the charged currents, along with overvoltage and temperature protection.
The working principle of the MUR820G is based on the rectification effect. In its simplest form, the MUR820G acts as a one-way conducting device which allows the flow of electrons from one side of the device (anode) to the other side of the device (cathode) and resists the flow of electrons in the opposite direction. This is known as a unidirectional conductor or diode.
The MUR820G contains two electrodes, one positively charged and the other negatively charged. The positively charged electrode – the anode – always contains a majority of electrons, while the negatively charged electrode, or cathode, always contains a minority of electrons. By applying an external electrical potential (voltage) across this diode (from the anode to the cathode), an electric field is generated, allowing electrons to flow from the anode to the cathode (forward bias) and blocking their flow from the cathode to the anode (reverse bias).
Therefore, the MUR820G can regulate the current according to the applied external voltage, forming a closed circuit configuration with other components. The rectification process of the MUR820G is commonly used in various circuit applications such as voltage doubling, converters, current limiters, diode pumps, and electrical power supplies.
In particular, the MUR820G is widely used in consumer electronics for AC-DC power supplies, power amplifiers, and inverters. It is also used in automotive electronics for automotive switches, motor control circuits, and overvoltage protection. Furthermore, it is widely employed in the industry for power factor correction, diode rectifiers, voltage regulation, and solar panels.
In summary, the MUR820G is a single diode, used as a rectification device in various electronics applications. It utilizes the rectifying effect of current flow across the device when an external voltage (forward bias) is applied, allowing current to flow in one direction while blocking the current in the opposite direction (reverse bias). The MUR820G is widely used in consumer and automotive electronics, as well as in the industry for power factor correction, voltage regulation, and other applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
MUR840G | ON Semicondu... | 0.69 $ | 2760 | DIODE GEN PURP 400V 8A TO... |
MUR805G | ON Semicondu... | 0.64 $ | 650 | DIODE GEN PURP 50V 8A TO2... |
MUR860 C0G | Taiwan Semic... | 0.87 $ | 495 | DIODE GEN PURP 600V 8A TO... |
MUR810G | ON Semicondu... | 0.63 $ | 1725 | DIODE GEN PURP 100V 8A TO... |
MUR880EG | ON Semicondu... | 0.82 $ | 6384 | DIODE GEN PURP 800V 8A TO... |
MUR8100EG | ON Semicondu... | 0.82 $ | 15587 | DIODE GEN PURP 1KV 8A TO2... |
MUR8L60HC0G | Taiwan Semic... | 0.2 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
MUR820HC0G | Taiwan Semic... | 0.22 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
MUR840 C0G | Taiwan Semic... | 0.23 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
MUR840HC0G | Taiwan Semic... | 0.25 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
MUR8L60 C0G | Taiwan Semic... | 0.25 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
MUR820 C0G | Taiwan Semic... | 0.34 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
MUR860HC0G | Taiwan Semic... | 0.37 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
VS-MUR820-M3 | Vishay Semic... | 0.63 $ | 1000 | DIODE FRED 200V 8A TO220A... |
MUR820G | ON Semicondu... | 0.64 $ | 1750 | DIODE GEN PURP 200V 8A TO... |
MUR860G | ON Semicondu... | -- | 6303 | DIODE GEN PURP 600V 8A TO... |
MUR815G | ON Semicondu... | 0.62 $ | 2053 | DIODE GEN PURP 150V 8A TO... |
VS-MUR820PBF | Vishay Semic... | 0.9 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
VS-MUR820-N3 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
MUR820 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 8A TO... |
MUR815 | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
MUR880E | ON Semicondu... | -- | 1000 | DIODE GEN PURP 800V 8A TO... |
MUR810 | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
MUR860 | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
MUR840 | ON Semicondu... | -- | 1000 | DIODE GEN PURP 400V 8A TO... |
MUR8100E | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 8A TO2... |
MUR805 | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
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