Allicdata Part #: | MUR860OS-ND |
Manufacturer Part#: |
MUR860 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 600V 8A TO220AC |
More Detail: | Diode Standard 600V 8A Through Hole TO-220AC |
DataSheet: | MUR860 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SWITCHMODE™ |
Packaging: | Tube |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 60ns |
Current - Reverse Leakage @ Vr: | 10µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220AC |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | MUR860 |
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Diodes are a versatile component that are widely used in electronic devices, particularly in electronic circuits. The MUR860 is a widely used diode rectifier with a single configuration. This single-component rectifier has a maximum repetitive peak reverse voltage of 800V and a maximum average rectified forward current of 8A. It is ideal for many applications where a single-component rectifier is needed, such as switching power supplies, UPS systems, battery chargers, and regulating the output of switched-mode power supplies, due to its low cost and high efficiency.
The MUR860 consists of two semiconductor layers, including an N-type silicon substrate and a P-type silicon substrate. These two layers are also known as p-region and n-region respectively. The n-type silicon substrate forms the anode terminal and the p-type silicon substrate forms the cathode terminal. This arrangement of the two layers makes the MUR860 an ideal open-circuit rectifier.
When the diode is forward-biased, on the N-type layer, electrons are pushed across the junction to the P-type layer and holes are drawn from the P-type layer to the N-type layer. This increases the flow of current, which is what is needed in a rectifier. On the other hand, when the diode is reversed-biased, the high built in electric field repels the electrons in the N-type layer, preventing any further current flow. The MUR860 can also be used as an ideal short-circuit rectifier, as it has a very low turn-on voltage and can quickly switch ON and OFF.
The MUR860 has a high surge current handling capabilities. This is due to the low on-state voltage and the low reverse leakage current of the device. This allows the MUR860 to handle surges in current without any damage or degradation to the device. Likewise, the low forward-voltage drop of the device also helps to reduce power loss and increase efficiency.
The MUR860 also has a wide operating temperature range, from -55 Celsius to +150 Celsius. This allows the device to be used in a wide range of applications, including automotive and industrial applications. Additionally, the device is hermetically sealed and has a glass-filled proprietary package that provides excellent mechanical stability and good thermal properties.
The MUR860 is a versatile single-component rectifier that has many useful applications. It is ideal for a variety of circuits, such as switching power supplies, UPS systems, battery chargers, and regulating the output of switched-mode power supplies due to its low VF and high surge current capabilities. Additionally, its low on-state voltage and wide operating temperature range make it suitable for automotive and industrial applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
MUR840G | ON Semicondu... | 0.69 $ | 2760 | DIODE GEN PURP 400V 8A TO... |
MUR805G | ON Semicondu... | 0.64 $ | 650 | DIODE GEN PURP 50V 8A TO2... |
MUR860 C0G | Taiwan Semic... | 0.87 $ | 495 | DIODE GEN PURP 600V 8A TO... |
MUR810G | ON Semicondu... | 0.63 $ | 1725 | DIODE GEN PURP 100V 8A TO... |
MUR880EG | ON Semicondu... | 0.82 $ | 6384 | DIODE GEN PURP 800V 8A TO... |
MUR8100EG | ON Semicondu... | 0.82 $ | 15587 | DIODE GEN PURP 1KV 8A TO2... |
MUR8L60HC0G | Taiwan Semic... | 0.2 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
MUR820HC0G | Taiwan Semic... | 0.22 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
MUR840 C0G | Taiwan Semic... | 0.23 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
MUR840HC0G | Taiwan Semic... | 0.25 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
MUR8L60 C0G | Taiwan Semic... | 0.25 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
MUR820 C0G | Taiwan Semic... | 0.34 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
MUR860HC0G | Taiwan Semic... | 0.37 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
VS-MUR820-M3 | Vishay Semic... | 0.63 $ | 1000 | DIODE FRED 200V 8A TO220A... |
MUR820G | ON Semicondu... | 0.64 $ | 1750 | DIODE GEN PURP 200V 8A TO... |
MUR860G | ON Semicondu... | -- | 6303 | DIODE GEN PURP 600V 8A TO... |
MUR815G | ON Semicondu... | 0.62 $ | 2053 | DIODE GEN PURP 150V 8A TO... |
VS-MUR820PBF | Vishay Semic... | 0.9 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
VS-MUR820-N3 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
MUR820 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 8A TO... |
MUR815 | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
MUR880E | ON Semicondu... | -- | 1000 | DIODE GEN PURP 800V 8A TO... |
MUR810 | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
MUR860 | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
MUR840 | ON Semicondu... | -- | 1000 | DIODE GEN PURP 400V 8A TO... |
MUR8100E | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 8A TO2... |
MUR805 | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
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