Allicdata Part #: | MUR810GOS-ND |
Manufacturer Part#: |
MUR810G |
Price: | $ 0.63 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 100V 8A TO220-2 |
More Detail: | Diode Standard 100V 8A Through Hole TO-220-2 |
DataSheet: | MUR810G Datasheet/PDF |
Quantity: | 1725 |
1 +: | $ 0.57330 |
50 +: | $ 0.47162 |
100 +: | $ 0.38493 |
500 +: | $ 0.30429 |
1000 +: | $ 0.24343 |
Series: | SWITCHMODE™ |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 975mV @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 5µA @ 100V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220-2 |
Operating Temperature - Junction: | -65°C ~ 175°C |
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.The MUR810G is a 8 amp 1000 voltage ultrafast rectifier, specifically designed for high-frequency switch mode power supplies (SMPS) and other high-frequency power circuits. It is designed to meet the surge current needs of SMPS applications and also provides improved thermal efficiency compared to other diodes of its class. The general application field and working principle of the MUR810G are discussed below.
Application Field
The MUR810G rectifier is generally used in switch mode power supplies (SMPS) and other high frequency power circuits. It is well suited for power supplies used in automotive, telecom, industrial and consumer applications. Its ultrafast switching capability allows it to handle large surge currents, making it well suited for low voltage applications where high current pulses may occur. It is also suitable for popular switching regulators such as the flyback or forward converters, as well as power supply circuits that use metal-oxide-semiconductor field-effect transistors (MOSFETs).
Working Principle
The MUR810G is a single rectifier, meaning that it has a single P-N junction. When no voltage is applied, the junction is reverse biased, meaning that the depletion layer forms on both sides of the junction and prevents current from flowing. However, when a positive voltage is applied to the anode, the positive charges from the external voltage cause the depletion layer to become thinner and allow current to flow. Reversely, when a negative voltage is applied to the cathode, positive charge from the external voltage cause the depletion layer to become thicker and prevent current from flowing.
The MUR810G is also an ultrafast rectifier. This means that it can switch on and off rapidly and respond quickly to changing input voltages, making it ideal for high frequency switching applications. The rapid switching provided by the MUR810G also minimizes power losses compared to traditional rectifiers that switch slowly. In addition to its speed, the MUR810G is also highly efficient, meaning that it can provide higher power output with lower power input. This makes it a great choice for low voltage power supplies.
General Characteristics
The MUR810G can handle up to 8 amps of current and has a breakdown voltage of 1000 volts. It has a reverse recovery time of 10ns and a forward voltage of 1.1 volts. Its maximum operating temperature is 175°C and its thermal resistance is 4.3°C/W. Its total power dissipation is 37.5 watts and its junction capacitance is 160pF. Its maximum surge reverse current is 10 A.
Conclusion
The MUR810G is an 8 amp 1000 volt ultrafast rectifier specifically designed for use in switch mode power supplies (SMPS) and other high-frequency power circuits. Its ultrafast switching capability allows it to handle large surge currents while minimizing power losses. Combined with its high efficiency and low forward voltage, the MUR810G makes an ideal choice for low voltage power supplies.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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MUR810G | ON Semicondu... | 0.63 $ | 1725 | DIODE GEN PURP 100V 8A TO... |
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MUR8L60HC0G | Taiwan Semic... | 0.2 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
MUR820HC0G | Taiwan Semic... | 0.22 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
MUR840 C0G | Taiwan Semic... | 0.23 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
MUR840HC0G | Taiwan Semic... | 0.25 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
MUR8L60 C0G | Taiwan Semic... | 0.25 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
MUR820 C0G | Taiwan Semic... | 0.34 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
MUR860HC0G | Taiwan Semic... | 0.37 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
VS-MUR820-M3 | Vishay Semic... | 0.63 $ | 1000 | DIODE FRED 200V 8A TO220A... |
MUR820G | ON Semicondu... | 0.64 $ | 1750 | DIODE GEN PURP 200V 8A TO... |
MUR860G | ON Semicondu... | -- | 6303 | DIODE GEN PURP 600V 8A TO... |
MUR815G | ON Semicondu... | 0.62 $ | 2053 | DIODE GEN PURP 150V 8A TO... |
VS-MUR820PBF | Vishay Semic... | 0.9 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
VS-MUR820-N3 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
MUR820 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 8A TO... |
MUR815 | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
MUR880E | ON Semicondu... | -- | 1000 | DIODE GEN PURP 800V 8A TO... |
MUR810 | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
MUR860 | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
MUR840 | ON Semicondu... | -- | 1000 | DIODE GEN PURP 400V 8A TO... |
MUR8100E | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 8A TO2... |
MUR805 | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
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