NAND01GW3A0AN6E

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NAND01GW3A0AN6E is a new type of memory device which is mainly used in consumer electronic products, digital products, and computer systems. This memory device is characterized by high data transfer rates, low power dissipation, and non-volatile storage. The NAND01GW3A0AN6E provides a number of features including multi-lane operation, programmable page size, and read/write protection.

NAND01GW3A0AN6E memory device uses the NAND Flash principle, which is a type of non-volatile memory technology that stores data in memory cells by trapping electrons in a range of charge states. This technology is based on negative-charging and positive-discharging of these cells. The storage and retrieval of data is done by controlling the charge states of the cell. Each memory cell is connected to a floating gate which is used to control the charge state of the cell. In NAND Flash based memory devices, individual cells can be programmed or erased by applying the desired voltages.

The NAND01GW3A0AN6E memory device is mainly used memory applications including flash memory cards, USB memory drives, and multimedia cards. The NAND Flash memory device is not limited upon the number of times individual cells can be programmed or erased. It has an endurance of 10,000 write/erase cycles, which makes it particularly suitable for storing and retrieving data in the context of consumer electronics and digital products.

NAND01GW3A0AN6E memory device also comes with a range of features including a programmable block size, read/write protection, and data transfer rates. The programmable block size allows programming and erasing of multiple cells as a unit. This increases the speed of programming of the cells and maximizes reliability. The read/write protection feature is used to prevent unauthorized write/erase operations from occurring on the memory device.

The data transfer rate of the NAND01GW3A0AN6E memory device is up to 4.5 megabytes per second (MB/s). This rate is fast enough to support a wide range of consumer electronics and digital products. The NAND01GW3A0AN6E memory device is also compatible with the existing NAND Flash-based embedded processor and microcontroller products, making it a good choice for an embedded platform.

In conclusion, the NAND01GW3A0AN6E memory device is a reliable and cost-effective memory solution for embedded applications. The device is characterized by high data transfer rates, low power dissipation, and non-volatile storage. It is also capable of withstanding up to 10,000 write/erase cycles. The device provides a range of features including multi-lane operation, programmable block size, and read/write protection, making it suitable for a range of embedded applications.

The specific data is subject to PDF, and the above content is for reference