NAND512W3A2SN6E Allicdata Electronics
Allicdata Part #:

NAND512W3A2SN6E-ND

Manufacturer Part#:

NAND512W3A2SN6E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 512M PARALLEL 48TSOP
More Detail: FLASH - NAND Memory IC 512Mb (64M x 8) Parallel 5...
DataSheet: NAND512W3A2SN6E datasheetNAND512W3A2SN6E Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Mb (64M x 8)
Write Cycle Time - Word, Page: 50ns
Access Time: 50ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP
Base Part Number: NAND512-A
Description

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NAND512W3A2SN6E, an integrated memory chip, is among the latest memory devices produced by Toshiba. It is a non-volatile storage solution for a wide range of applications. The NAND512W3A2SN6E memory devices feature a serial interface and up to 8 Kbits of memory storage capacity. NAND512W3A2SN6E is suitable for use in consumer products, automotive systems, medical equipment, industrial systems, and other applications.

The NAND512W3A2SN6E integrates up to 8 Kbits of memory storage on a single chip. It is highly reliable, with a guaranteed write endurance of 1 million cycles and an error correction code (ECC) that can detect and correct an error in up to 27 bits of data. It also has a data retention time of over 20 years and can operate over a wide range of temperature and voltage conditions. The device\'s internal access controller makes data transfer easier and more efficient, and its built-in AES-128 encryption module helps protect data stored in the memory chip.

The NAND512W3A2SN6E uses a floating gate non-volatile Flash memory technology for storing data. Each Flash cell is made up of two MOSFETs, connected in series. An electric charge is stored on the floating gate between the two MOSFETs, which acts as a switch between the two transistors. To access the data stored in the memory, the MOSFETs are switched on or off, thereby allowing data to be stored or retrieved from the memory cell.

Data can be read from or written to the NAND512W3A2SN6E memory chip using the serial peripheral interface (SPI). The SPI is a full-duplex serial communication protocol that supports both read and write operations. It also supports multiple slave devices and provides clock synchronization across them. The NAND512W3A2SN6E memory chip also includes an internal clock generator to provide the necessary timing signals to the SPI, which simplifies the programming process.

The NAND512W3A2SN6E is a powerful and highly reliable memory solution, suitable for a wide range of applications. Its small size and low power consumption make it ideal for use in consumer products, automotive systems, medical equipment and industrial systems. Its high performance and rich features make it a great choice for applications requiring non-volatile storage.

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