NAND512W3A2DN6E Allicdata Electronics
Allicdata Part #:

NAND512W3A2DN6E-ND

Manufacturer Part#:

NAND512W3A2DN6E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 512M PARALLEL 48TSOP
More Detail: FLASH - NAND Memory IC 512Mb (64M x 8) Parallel 5...
DataSheet: NAND512W3A2DN6E datasheetNAND512W3A2DN6E Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Mb (64M x 8)
Write Cycle Time - Word, Page: 50ns
Access Time: 50ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP
Base Part Number: NAND512-A
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NAND512W3A2DN6E is a type of memory, more specifically a type of flash memory. It is produced by Samsung as a non-volatile storage solution.

The NAND512W3A2DN6E comes in a variety of form factors including SO-DIMM packages, allowing for easy installation into most systems. This type of memory is commonly found in embedded applications and provides a significant step up from the more commonly available NOR flash memory.

Unlike other forms of memory which might require complex programming in order to store and retrieve data, NAND512W3A2DN6E memory uses a simple one-wire interface that allows for fast read and write operations. This makes the memory particularly suitable for applications where high speed and low power consumption is a priority.

Applications of the NAND512W3A2DN6E include digital cameras, music devices, GPS receivers, and video players. The primary benefit of this type of memory is that it is non-volatile. This means that it will retain its data even in the event of a power failure.

The working principle behind the NAND512W3A2DN6E memory is fairly simple. In short, the memory is composed of a series of transistors and capacitors that form an array. When power is supplied to the memory, transistors are activated and data is written to the array. When the memory is powered down, the data remains written to the array thanks to the capacitors.

When data is requested by the user, the transistors are activated in order to read the correct array. This is done in a way that ensures a minimum amount of power is used. As such, the NAND512W3A2DN6E memory is ideal for applications where battery life is of critical importance.

Overall, the NAND512W3A2DN6E memory is an ideal memory solution for embedded applications that require fast read and write operations and do not require large amounts of space. These attributes make it a popular choice for digital cameras, music devices, GPS receivers, and video players.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "NAND" Included word is 30
Part Number Manufacturer Price Quantity Description
HPS-NAND-A Intel 175.0 $ 1000 STRATIX 10 HPS IO48 NAND ...
NAND128W3A0AN6F STMicroelect... 0.0 $ 1000 IC FLASH 128M PARALLEL 48...
QSHDC-NAND-A Intel 175.0 $ 1000 ARRIA 10 NAND DAUGHTER CA...
QSHDC-SDM-NAND-A Intel 175.0 $ 1000 STRATIX 10 SDM NAND BOOT ...
NAND256W3A2BN6F TR Micron Techn... 0.0 $ 1000 IC FLASH 256M PARALLEL 48...
NAND256W3A2BN6F STMicroelect... -- 1000 IC FLASH 256M PARALLEL 48...
NAND512W3A2SN6E Micron Techn... -- 1000 IC FLASH 512M PARALLEL 48...
NAND512R3A2SZA6F Micron Techn... 0.0 $ 1000 IC FLASH 512M PARALLEL 63...
NAND01GR3B2BZA6E Micron Techn... 0.0 $ 1000 IC FLASH 1G PARALLEL 63VF...
NAND128W3A0BN6E Micron Techn... 0.0 $ 1000 IC FLASH 128M PARALLEL 48...
NAND512W3A2BN6F STMicroelect... 0.0 $ 1000 IC FLASH 512M PARALLEL 48...
NAND01GW3B2AN6F STMicroelect... -- 1000 IC FLASH 1G PARALLEL 48TS...
NAND512R3A2AZA6E STMicroelect... 0.0 $ 1000 IC FLASH 512M PARALLEL 55...
NAND256R3A2BZA6E Micron Techn... -- 1000 IC FLASH 256M PARALLEL 55...
NAND08GW3D2AN6E Micron Techn... 0.0 $ 1000 IC FLASH 8G PARALLEL 48TS...
NAND01GW3A0AN6E STMicroelect... 0.0 $ 1000 IC FLASH 1G PARALLEL 48TS...
NAND128W3A2BN6E Micron Techn... 0.0 $ 1000 IC FLASH 128M PARALLEL 48...
NAND128W3A2BNXE Micron Techn... 0.0 $ 1000 IC FLASH 128M PARALLEL 48...
NAND512W3A2DN6E Micron Techn... -- 1000 IC FLASH 512M PARALLEL 48...
AE-B55-NAND-2 Phyton Inc. 259.22 $ 1000 ADPT DIP40/BGA55 NAND FLA...
NAND04GW3B2DN6E Micron Techn... -- 1000 IC FLASH 4G PARALLEL 48TS...
NAND512W3A2SE06 Micron Techn... 0.0 $ 1000 IC FLASH 512M PARALLELFLA...
NAND16GW3B6DPA6E Micron Techn... 0.0 $ 1000 IC FLASH 16G PARALLEL 114...
NAND512W3A2SN6F TR Micron Techn... 0.0 $ 1000 IC FLASH 512M PARALLEL 48...
NAND02GR3B2DN6E Micron Techn... 0.0 $ 1000 IC FLASH 2G PARALLEL 48TS...
NAND08GAH0FZC5E Micron Techn... 0.0 $ 1000 IC FLASH 8G MMC 52MHZ 153...
NAND01GW3A2AN6E STMicroelect... 0.0 $ 1000 IC FLASH 1G PARALLEL 48TS...
NAND08GW3F2AN6E Micron Techn... -- 1000 IC FLASH 8G PARALLEL 48TS...
NAND512W3A0AN6E STMicroelect... 0.0 $ 1000 IC FLASH 512M PARALLEL 48...
NAND02GAH0LZC5E Micron Techn... 0.0 $ 1000 IC FLASH 2G MMC 52MHZ 153...
Latest Products
MT53D512M64D4NZ-053 WT ES...

IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...

MT53D512M64D4NZ-053 WT ES:D TR Allicdata Electronics
ECF620AAACN-C1-Y3-ES

LPDDR3 6G DIE 192MX32Memory IC

ECF620AAACN-C1-Y3-ES Allicdata Electronics
MT53B384M64D4NK-053 WT ES...

IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...

MT53B384M64D4NK-053 WT ES:B Allicdata Electronics
70V25S45J

IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...

70V25S45J Allicdata Electronics
71321LA55JI8

IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...

71321LA55JI8 Allicdata Electronics
7027L55PFI8

IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...

7027L55PFI8 Allicdata Electronics