
Allicdata Part #: | NAND512W3A2DN6E-ND |
Manufacturer Part#: |
NAND512W3A2DN6E |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 512M PARALLEL 48TSOP |
More Detail: | FLASH - NAND Memory IC 512Mb (64M x 8) Parallel 5... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 512Mb (64M x 8) |
Write Cycle Time - Word, Page: | 50ns |
Access Time: | 50ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 48-TSOP |
Base Part Number: | NAND512-A |
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NAND512W3A2DN6E is a type of memory, more specifically a type of flash memory. It is produced by Samsung as a non-volatile storage solution.
The NAND512W3A2DN6E comes in a variety of form factors including SO-DIMM packages, allowing for easy installation into most systems. This type of memory is commonly found in embedded applications and provides a significant step up from the more commonly available NOR flash memory.
Unlike other forms of memory which might require complex programming in order to store and retrieve data, NAND512W3A2DN6E memory uses a simple one-wire interface that allows for fast read and write operations. This makes the memory particularly suitable for applications where high speed and low power consumption is a priority.
Applications of the NAND512W3A2DN6E include digital cameras, music devices, GPS receivers, and video players. The primary benefit of this type of memory is that it is non-volatile. This means that it will retain its data even in the event of a power failure.
The working principle behind the NAND512W3A2DN6E memory is fairly simple. In short, the memory is composed of a series of transistors and capacitors that form an array. When power is supplied to the memory, transistors are activated and data is written to the array. When the memory is powered down, the data remains written to the array thanks to the capacitors.
When data is requested by the user, the transistors are activated in order to read the correct array. This is done in a way that ensures a minimum amount of power is used. As such, the NAND512W3A2DN6E memory is ideal for applications where battery life is of critical importance.
Overall, the NAND512W3A2DN6E memory is an ideal memory solution for embedded applications that require fast read and write operations and do not require large amounts of space. These attributes make it a popular choice for digital cameras, music devices, GPS receivers, and video players.
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