Allicdata Part #: | NAND128W3A2BN6E-ND |
Manufacturer Part#: |
NAND128W3A2BN6E |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 128M PARALLEL 48TSOP |
More Detail: | FLASH - NAND Memory IC 128Mb (16M x 8) Parallel 5... |
DataSheet: | NAND128W3A2BN6E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 128Mb (16M x 8) |
Write Cycle Time - Word, Page: | 50ns |
Access Time: | 50ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 48-TSOP |
Base Part Number: | NAND128-A |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
:Memory
The NAND128W3A2BN6E is a flash memory that is highly sought after and used in a variety of applications. This type of memory is made up of nonvolatile cells known as NAND cells, which are capable of storing electrical charge even after power is removed from the circuit. This type of memory is often chosen for its excellent endurance and good cost-to-capacity ratio, making it one of the most popular types of memory in use today. In addition, it is resistant to shock, vibration and extreme temperatures.
The NAND128W3A2BN6E is a denser form of NAND memory and can store up to 128Gb bits (1Gb = 8Gb) of data in a single chip. The chip is organized in a 3-bit structure that allows data to be stored in a sequence, which is divided into three different set of connections or levels: source, drain and gate. This network of connections allows each memory cell to be easily accessed and updated.
The working principle of the NAND128W3A2BN6E is relatively simple. By applying an appropriate voltage to a single memory cell, a negative charge is created that in turn acts as a threshold voltage, which is necessary for the electrical charge to leak from the cell. This action creates a ‘1’ data bit. If the voltage is then removed, the cell is left uncharged, which means that it will remain as a ‘0’ data bit. By repeating this process, memory cells can then be programmed with a variety of information.
NAND128W3A2BN6E memory chips are utilized in a wide range of applications. They are used in all forms of data storage, from digital cameras, cell phones and USB drives to computer hard drives. They are also used in military and aerospace applications, where their robustness and durability makes them highly suitable. NAND memory chips are also extremely popular for embedded applications, such as automotive electronics, navigation systems and gaming consoles.
NAND128W3A2BN6E memory technology is a revolution in the world of memory storage and offers an affordable, efficient and reliable form of memory.Thanks to its robustness, high capacity and cost-effectiveness, the NAND128W3A2BN6E is expected to remain a popular choice in the coming years.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
AE-B55-NAND-2 | Phyton Inc. | 259.22 $ | 1000 | ADPT DIP40/BGA55 NAND FLA... |
AE-TS48-NAND-2 | Phyton Inc. | 0.0 $ | 1000 | ADAPTER SOCKET 48-TSOP TO... |
AE-TS48-NAND-4 | Phyton Inc. | 105.0 $ | 1000 | ADAPTER SOCKET 48-TSOP TO... |
QSHDC-NAND-A | Intel | 175.0 $ | 1000 | ARRIA 10 NAND DAUGHTER CA... |
HPS-NAND-A | Intel | 175.0 $ | 1000 | STRATIX 10 HPS IO48 NAND ... |
QSHDC-SDM-NAND-A | Intel | 175.0 $ | 1000 | STRATIX 10 SDM NAND BOOT ... |
NAND01GW3B2AN6F | STMicroelect... | -- | 1000 | IC FLASH 1G PARALLEL 48TS... |
NAND01GW4B2AN6E | STMicroelect... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
NAND02GW3B2AN6F | STMicroelect... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
NAND128W3A0AN6 | STMicroelect... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 48... |
NAND128W3A0AN6E | STMicroelect... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 48... |
NAND128W3A0AN6F | STMicroelect... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 48... |
NAND128W3A0BN6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 48... |
NAND128W3A0BN6F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 48... |
NAND128W3A2BN6F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 48... |
NAND256R3A2BZA6E | Micron Techn... | -- | 1000 | IC FLASH 256M PARALLEL 55... |
NAND256W3A0AN6 | STMicroelect... | -- | 1000 | IC FLASH 256M PARALLEL 48... |
NAND256W3A0AN6F | STMicroelect... | 0.0 $ | 1000 | IC FLASH 256M PARALLEL 48... |
NAND256W3A2BN6F | STMicroelect... | -- | 1000 | IC FLASH 256M PARALLEL 48... |
NAND512R3A2BZA6E | STMicroelect... | 0.0 $ | 1000 | IC FLASH 512M PARALLEL 63... |
NAND512W3A0AN6 | STMicroelect... | 0.0 $ | 1000 | IC FLASH 512M PARALLEL 48... |
NAND512W3A2BN6F | STMicroelect... | 0.0 $ | 1000 | IC FLASH 512M PARALLEL 48... |
NAND01GR3B2BZA6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
NAND01GW3B2BZA6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
NAND01GW3B2CN6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
NAND02GR3B2DZA6E | Micron Techn... | -- | 1000 | IC FLASH 2G PARALLEL 63VF... |
NAND02GW3B2DN6E | Micron Techn... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
NAND02GW3B2DZA6E | Micron Techn... | -- | 23963 | IC FLASH 2G PARALLEL 63VF... |
NAND04GW3B2DN6E | Micron Techn... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
NAND512R3A2CZA6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 512M PARALLEL 63... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...
LPDDR3 6G DIE 192MX32Memory IC
IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...
IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...
IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...
IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...