NAND128W3A2BN6E Allicdata Electronics
Allicdata Part #:

NAND128W3A2BN6E-ND

Manufacturer Part#:

NAND128W3A2BN6E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 128M PARALLEL 48TSOP
More Detail: FLASH - NAND Memory IC 128Mb (16M x 8) Parallel 5...
DataSheet: NAND128W3A2BN6E datasheetNAND128W3A2BN6E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Mb (16M x 8)
Write Cycle Time - Word, Page: 50ns
Access Time: 50ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP
Base Part Number: NAND128-A
Description

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Memory


The NAND128W3A2BN6E is a flash memory that is highly sought after and used in a variety of applications. This type of memory is made up of nonvolatile cells known as NAND cells, which are capable of storing electrical charge even after power is removed from the circuit. This type of memory is often chosen for its excellent endurance and good cost-to-capacity ratio, making it one of the most popular types of memory in use today. In addition, it is resistant to shock, vibration and extreme temperatures.


The NAND128W3A2BN6E is a denser form of NAND memory and can store up to 128Gb bits (1Gb = 8Gb) of data in a single chip. The chip is organized in a 3-bit structure that allows data to be stored in a sequence, which is divided into three different set of connections or levels: source, drain and gate. This network of connections allows each memory cell to be easily accessed and updated.


The working principle of the NAND128W3A2BN6E is relatively simple. By applying an appropriate voltage to a single memory cell, a negative charge is created that in turn acts as a threshold voltage, which is necessary for the electrical charge to leak from the cell. This action creates a ‘1’ data bit. If the voltage is then removed, the cell is left uncharged, which means that it will remain as a ‘0’ data bit. By repeating this process, memory cells can then be programmed with a variety of information.


NAND128W3A2BN6E memory chips are utilized in a wide range of applications. They are used in all forms of data storage, from digital cameras, cell phones and USB drives to computer hard drives. They are also used in military and aerospace applications, where their robustness and durability makes them highly suitable. NAND memory chips are also extremely popular for embedded applications, such as automotive electronics, navigation systems and gaming consoles.


NAND128W3A2BN6E memory technology is a revolution in the world of memory storage and offers an affordable, efficient and reliable form of memory.Thanks to its robustness, high capacity and cost-effectiveness, the NAND128W3A2BN6E is expected to remain a popular choice in the coming years.


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