| Allicdata Part #: | NAND01GW3B2AN6F-ND |
| Manufacturer Part#: |
NAND01GW3B2AN6F |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | STMicroelectronics |
| Short Description: | IC FLASH 1G PARALLEL 48TSOP |
| More Detail: | FLASH - NAND Memory IC 1Gb (128M x 8) Parallel 30... |
| DataSheet: |  NAND01GW3B2AN6F Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NAND |
| Memory Size: | 1Gb (128M x 8) |
| Write Cycle Time - Word, Page: | 30ns |
| Access Time: | 30ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 2.7 V ~ 3.6 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package: | 48-TSOP |
| Base Part Number: | NAND01G |
Description
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NAND01GW3B2AN6F is a memory product from Macronix, one of the world’s leading semiconductor manufacturers. It is a NOR Flash Memory, which is specifically designed for space-constrained and power-sensitive applications such as wearables, medical devices, and IoT (Internet of Things) applications. The memory is small in size, low power consumption, high storage capacity, and high operating temperature range, making it ideal for a variety of applications. The NAND01GW3B2AN6F is an 8-bit device, which can store up to 8192 bytes of data. It has an operating temperature range of -40°C to +85°C, which makes it suitable for use in a variety of environments. The device is also capable of providing protection against data corruption and requires minimal effort to maintain.NAND01GW3B2AN6F has two modes of operation: asynchronous and synchronous. Asynchronous mode is suitable for low power applications and synchronous mode is suitable for applications that require high speed or a wide range of operating frequencies. The memory is organized into four blocks, each of which can be powered independently, and each block can store up to 1024 bytes of data. The NAND01GW3B2AN6F is based on a split gate architecture which allows independent setting of the gate voltage and bias current. This allows for higher performance and more reliable operation in environments with wide temperature and/or voltage swings. The split gate architecture also makes NAND01GW3B2AN6F ideal for wearables, medical, and other applications with space constraints as it can be designed into extremely small and compact form factors.The NAND01GW3B2AN6F memory device supports a range of protocols including SPI, Erase/Program, Store Data and Read Data. The control register contains multiple status bits that control the core operations of the device and the Read Data and Store Data function. The device also has optional secure data features, including a read protect feature which enables secure read-only access to the device, and a write protect feature which provides added security by preventing unauthorized overwrite of stored data. It also includes a bunch of built-in data protection features such as sanitize, button lock and unique ID authentication codes.In conclusion, NAND01GW3B2AN6F is a low power, high storage capacity, and high operating temperature memory device ideal for space-constrained and power-sensitive applications such as wearables, medical devices, and IoT. It can be designed into extremely small form factors and provides a range of sophisticated features for added data protection and reliability. With its wide operating temperature range, split gate architecture, and other features, NAND01GW3B2AN6F is the perfect choice for memory-constrained applications.
The specific data is subject to PDF, and the above content is for reference
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