NAND04GW3B2DN6E

Series:	--
Packaging:	Tray
Part Status:	Discontinued at Digi-Key
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	4Gb (512M x 8)
Write Cycle Time - Word, Page:	25ns
Access Time:	25ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	48-TSOP
Base Part Number:	NAND04G

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NAND04GW3B2DN6E Memory

NAND04GW3B2DN6E, or simply NAND, is a type of non-volatile flash memory. NAND is used in various applications, including industrial, consumer, medical, automotive, and gaming. The device is popular because it is reliable and can be used for multiple purposes.

Application Field

NAND memory is a popular choice for mobile, industrial, and consumer applications. NAND can be used in flash drives, cellphones, digital cameras, camcorders, GPS navigation devices, PDAs, MP3 players, and digital recording media. It is also used in personal digital assistants (PDAs) and embedded systems. Additionally, NAND is used in USB flash drives, in cameras and digital entertainment devices.NAND memory is often used in consumer applications, such as digital cameras, iPods and portable media players, gaming consoles, and mobile phones. It is also used in industrial applications, such as factory automation, robotics, and medical equipment. In the automotive field, NAND memory is used to store data for onboard computers and for providing data for navigation systems.

Working Principle

NAND flash memory works by storing data in small cells arranged in a grid. Each cell consists of two transistors and one floating gate. The two transistors are used as a switch and the circuit is used to control the charge stored on the floating gate. Depending on the logic used, this allows the cell to determine if the stored data is a 1 or a zero. The cells are arranged in a grid and connected to the row and column lines. In order to write data to a cell, the row and column lines are used to select the target cell and then the appropriate voltage is applied to the cell to write the data. To read the data, the row and column lines are again used to select the target cell and then the voltage on the cell is read. This allows the memory to determine the data stored in the cell. NAND flash memory can store up to 8 bits of data per cell, depending on the manufacturer. Additionally, NAND memory is able to be programmed and erased in blocks, allowing for large amounts of data to be written and erased quickly.

Advantages

NAND flash memory has many advantages. It is quick, reliable, and able to store large amounts of data in a small form factor. Additionally, NAND memory is relatively inexpensive, making it an attractive choice for consumer applications. It is also rugged, able to withstand extreme temperatures, shock, vibration, and magnetism.NAND memory is also non-volatile, meaning that it does not need to be powered to retain data. This makes it ideal for applications that require data to be stored for long periods of time without the need for power. Finally, NAND memory is able to be written and erased quickly, making it ideal for applications that require frequent data writing and erasing. Overall, NAND flash memory is a reliable, cost effective, and versatile form of non-volatile memory that is well suited to a variety of applications.

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