NAND256W3A2BN6F TR Allicdata Electronics
Allicdata Part #:

NAND256W3A2BN6FTR-ND

Manufacturer Part#:

NAND256W3A2BN6F TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 256M PARALLEL 48TSOP
More Detail: FLASH - NAND Memory IC 256Mb (32M x 8) Parallel 5...
DataSheet: NAND256W3A2BN6F TR datasheetNAND256W3A2BN6F TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Mb (32M x 8)
Write Cycle Time - Word, Page: 50ns
Access Time: 50ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP
Base Part Number: NAND256
Description

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Memory technology is an integral part of the today\'s computer industry. NAND256W3A2BN6F TR is a type of memory technology developed by Toshiba. It is known for its reliability and efficiency. The technology is used in a broad range of applications including consumer electronics, gaming, automotive, and industrial applications. This article will discuss the application fields and working principle of NAND256W3A2BN6F TR.

Application Fields

NAND256W3A2BN6F TR has a wide range of applications. One of its main applications is in consumer electronics where it is used for data storage. It is used in many audio, video, and laptop products to store digital media files. It is used in gaming devices such as video game consoles, personal computers, and mobile phones for storing large amounts of games and software. It is also used in automobiles for storing GPS maps, satellite images, and backup data. Additionally, it is used in industrial applications such as robotics, automation, and other process control applications.

Working Principle

NAND256W3A2BN6F TR works in a similar way to DRAM (Dynamic Random Access Memory). Its main components are a series of transistors which are arranged in a specific pattern. When a voltage is applied to the transistors, they will switch on and off according to the instructions given. The NAND256W3A2BN6F TR is built around the Flash-platform architecture. The architecture consists of two components: the floating gate and the control gate. The floating gate is the part of the transistors that keeps the memory stored. The control gate is the part of the transistors that controls the read and write operations. The Flash-platform architecture is capable of storing multiple bits of data which allows for more efficient data storage.

NAND256W3A2BN6F TR operates at higher speed compared to other types of memory. The memory can be accessed quickly and it has a low power consumption compared to other types of memory technology. This makes it ideal for applications such as robotics and automation which require high speed and low power consumption. Additionally, it is known for its reliability and efficiency. The memory has a high tolerance to environmental changes such as temperature, vibrations, and shock. This makes it suitable for a variety of applications.

Conclusion

NAND256W3A2BN6F TR is a type of memory technology developed by Toshiba. It is used in a broad range of applications including consumer electronics, gaming, automotive, and industrial applications. The technology works using a Flash-platform architecture which consists of two components: the floating gate and the control gate. It operates at higher speeds compared to other types of memories and has a low power consumption and high tolerance to environmental changes. This makes it suitable for applications such as robotics, automation, and other process control applications.

The specific data is subject to PDF, and the above content is for reference

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