NAND256W3A2BN6F Allicdata Electronics
Allicdata Part #:

NAND256W3A2BN6F-ND

Manufacturer Part#:

NAND256W3A2BN6F

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: STMicroelectronics
Short Description: IC FLASH 256M PARALLEL 48TSOP
More Detail: FLASH - NAND Memory IC 256Mb (32M x 8) Parallel 5...
DataSheet: NAND256W3A2BN6F datasheetNAND256W3A2BN6F Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Mb (32M x 8)
Write Cycle Time - Word, Page: 50ns
Access Time: 50ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP
Base Part Number: NAND256
Description

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The NAND256W3A2BN6F is a type of memory designed for a variety of applications. It is a multi-level cell (MLC) NAND flash memory device, which has a capacity of 256 megabytes. This type of memory is a non-volatile storage solution that offers fast read and write speeds and also consumes a very low amount of power while in operation.

The main application field of NAND256W3A2BN6F is its usage in consumer electronic products such as digital cameras, PDAs, MP3 players, mobile phones and other portable handheld devices. It is also used in various embedded designs such as military applications and vehicle systems. This type of memory is also used in computer systems and is popular for applications such as storing online databases, operating embedded systems and for cryptocurrency mining.

The working principle of the NAND256W3A2BN6F is based on the NAND architecture. This type of memory is composed of memory cells arranged in a grid pattern. Each cell consists of at least two transistors and a capacitor, which are connected by a wiring layer. The cells are connected to word lines and bit lines to write and read data. The process of writing and erasing data is accomplished by manipulating the voltages applied to the word and bit lines.

The NAND architecture has several advantages over other types of memory. It allows for faster access time and higher performance than the other architectures such as NOR architectures. It also consumes significantly less power than other types of memories. Furthermore, NAND flash memories are more durable and last longer than other types of non-volatile memory.

The NAND256W3A2BN6F is a versatile memory device that can be used for a variety of applications. It is used in embedded systems and for applications such as storing databases, operating embedded systems and for cryptocurrency mining. It is also popular for use in consumer electronics products due to its low power consumption, fast read and write speeds, and durability.

The specific data is subject to PDF, and the above content is for reference

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