Allicdata Part #: | 497-3617-ND |
Manufacturer Part#: |
NAND512W3A0AN6E |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | STMicroelectronics |
Short Description: | IC FLASH 512M PARALLEL 48TSOP |
More Detail: | FLASH - NAND Memory IC 512Mb (64M x 8) Parallel 5... |
DataSheet: | NAND512W3A0AN6E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 512Mb (64M x 8) |
Write Cycle Time - Word, Page: | 50ns |
Access Time: | 50ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 48-TSOP |
Base Part Number: | NAND512 |
Description
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NAND512W3A0AN6E is a type of NAND-Flash Memory device, data being stored electrically on a chip rather than magnetically, which is one of the latest Non-Volatile Memory device available in the market. It is an embryonic Non-Volatile Memory technology, highly sought after for its fast read/write time and scalability. The NAND512W3A0AN6E encompasses an array of memory cells, each designed to save one bit. This tiny device is ideal for mobile, automotive, and gaming applications where limited space is available and fast read/write speeds are essential.NAND512W3A0AN6E is a type of NAND-Flash Memory device that has a very distinct working principle. Its basic structure is composed of two cells with a FET switch between them, each FET switch being connected to the cells. When the voltage applied to the FET is low, the cell is “on”, meaning it is storing a bit of data, while when the voltage is high, the cell is “off”, not storing any data. When the FET voltage is changed, it transfers the bit of data from the first cell to the second cell and the second then becomes “on”.The NAND512W3A0AN6E has multiple applications including personal digital assistants (PDAs), multimedia players, gaming devices, digital cameras and smart phones. Due to its high capacity and fast read/write time, it can store large amounts of data quickly, allowing for more efficient data access. It is also beneficial for devices with limited space, as the tiny size and the duplex mode allows the device to save space, further enhancing the efficiency of the device.The NAND512W3A0AN6E can be used as an internal or external storage device or as a system or boot Flash device. Its fast read/write speed, capacity, and scalability also makes it a great choice for network attached storage (NAS) and solid state drives (SSD). Its sustained read/write performance makes it the ideal choice for high-performance computing (HPC) applications. In addition, due to its low power consumption, it is the perfect solution for low-powered embedded systems.Overall, the NAND512W3A0AN6E is an excellent choice for devices with limited space, requiring quick read/write speeds and a large capacity. Not only that, its robust working principle, efficient data access, and low power consumption also makes it a great option for numerous applications, such as PDAs, multimedia players, gaming devices, digital cameras, smart phones, NAS, SSD, and HPC systems.The specific data is subject to PDF, and the above content is for reference
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