NAND08GW3F2AN6E Allicdata Electronics
Allicdata Part #:

NAND08GW3F2AN6E-ND

Manufacturer Part#:

NAND08GW3F2AN6E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 8G PARALLEL 48TSOP
More Detail: FLASH - NAND Memory IC 8Gb (1G x 8) Parallel 25ns...
DataSheet: NAND08GW3F2AN6E datasheetNAND08GW3F2AN6E Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 8Gb (1G x 8)
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP
Base Part Number: NAND08G
Description

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NAND08GW3F2AN6E Memory

NAND08GW3F2AN6E (NAND Flash) is a type of memory that is frequently used in consumer electronic products and data storage devices. The NAND08GW3F2AN6E is a type of NAND Flash memory, which is the most commonly used type of Flash memory. It is highly reliable, fast, and cost-effective, and provides an excellent balance between reliability and price.

Application Field of NAND08GW3F2AN6E Memory

NAND08GW3F2AN6E memory is used in a wide variety of applications, including digital video players, digital cameras, memory cards, USB flash drives, and embedded systems. It is also used to store large amounts of data in high-speed server systems, due to its high data transfer speeds. NAND08GW3F2AN6E memory has become an important component of the modern compute infrastructure.

Working Principle of NAND08GW3F2AN6E Memory

NAND08GW3F2AN6E memory is based on the NAND cell structure. A NAND cell is a type of memory cell which consists of two transistors arranged in a cross-coupled configuration. The two transistors are connected in series with a Storage electrode between them. When the Storage electrode is at a low voltage, the NAND cell is in an OFF state, while when the Storage electrode is at a high voltage, the cell is in an ON state.

NAND08GW3F2AN6E memory is read by sending a voltage signal to the Storage electrode. The transistors in the NAND cell will then allow or block the current passing through the cell, depending on the state of the Storage electrode. The current passing through the cell will determine whether the data stored in the cell is a logic "0" or "1".

NAND08GW3F2AN6E memory is written in a similar way. A voltage is applied to the Storage electrode, and depending on the logic state that is desired, a certain amount of current will be applied to either turn the NAND cell OFF or ON. The cell will be written with the corresponding logic state.

Advantages of NAND08GW3F2AN6E Memory

The primary advantage of NAND08GW3F2AN6E memory is its fast read and write speeds. NAND Flash memory is able to operate at speeds up to 200MB/second, which is faster than most other types of memory. It is also a very reliable type of memory, which makes it useful in many applications.

Another advantage of NAND08GW3F2AN6E memory is its low power consumption. NAND Flash memory does not require much power to read or write data, and it can be used in devices where power consumption is important, such as mobile devices and laptop computers. NAND Flash memory also has a very long data retention period, meaning that it can retain data for long periods of time without corrupting.

NAND08GW3F2AN6E memory is also very inexpensive, which makes it ideal for storing large amounts of data in a cost-effective manner. Finally, NAND Flash memory is easy to use and is designed to be compatible with most existing memory technologies.

Conclusion

NAND08GW3f2AN6E memory is a type of Flash memory that is used in a wide variety of applications. It is fast, reliable, and low power, making it an ideal choice for applications that need fast data access, as well as long data retention periods. In addition, NAND Flash memory is very inexpensive and easy to use, making it a popular choice for many embedded systems and consumer electronic products.

The specific data is subject to PDF, and the above content is for reference

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