
Allicdata Part #: | NAND08GW3F2AN6E-ND |
Manufacturer Part#: |
NAND08GW3F2AN6E |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 8G PARALLEL 48TSOP |
More Detail: | FLASH - NAND Memory IC 8Gb (1G x 8) Parallel 25ns... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 8Gb (1G x 8) |
Write Cycle Time - Word, Page: | 25ns |
Access Time: | 25ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 48-TSOP |
Base Part Number: | NAND08G |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
NAND08GW3F2AN6E Memory
NAND08GW3F2AN6E (NAND Flash) is a type of memory that is frequently used in consumer electronic products and data storage devices. The NAND08GW3F2AN6E is a type of NAND Flash memory, which is the most commonly used type of Flash memory. It is highly reliable, fast, and cost-effective, and provides an excellent balance between reliability and price.
Application Field of NAND08GW3F2AN6E Memory
NAND08GW3F2AN6E memory is used in a wide variety of applications, including digital video players, digital cameras, memory cards, USB flash drives, and embedded systems. It is also used to store large amounts of data in high-speed server systems, due to its high data transfer speeds. NAND08GW3F2AN6E memory has become an important component of the modern compute infrastructure.
Working Principle of NAND08GW3F2AN6E Memory
NAND08GW3F2AN6E memory is based on the NAND cell structure. A NAND cell is a type of memory cell which consists of two transistors arranged in a cross-coupled configuration. The two transistors are connected in series with a Storage electrode between them. When the Storage electrode is at a low voltage, the NAND cell is in an OFF state, while when the Storage electrode is at a high voltage, the cell is in an ON state.
NAND08GW3F2AN6E memory is read by sending a voltage signal to the Storage electrode. The transistors in the NAND cell will then allow or block the current passing through the cell, depending on the state of the Storage electrode. The current passing through the cell will determine whether the data stored in the cell is a logic "0" or "1".
NAND08GW3F2AN6E memory is written in a similar way. A voltage is applied to the Storage electrode, and depending on the logic state that is desired, a certain amount of current will be applied to either turn the NAND cell OFF or ON. The cell will be written with the corresponding logic state.
Advantages of NAND08GW3F2AN6E Memory
The primary advantage of NAND08GW3F2AN6E memory is its fast read and write speeds. NAND Flash memory is able to operate at speeds up to 200MB/second, which is faster than most other types of memory. It is also a very reliable type of memory, which makes it useful in many applications.
Another advantage of NAND08GW3F2AN6E memory is its low power consumption. NAND Flash memory does not require much power to read or write data, and it can be used in devices where power consumption is important, such as mobile devices and laptop computers. NAND Flash memory also has a very long data retention period, meaning that it can retain data for long periods of time without corrupting.
NAND08GW3F2AN6E memory is also very inexpensive, which makes it ideal for storing large amounts of data in a cost-effective manner. Finally, NAND Flash memory is easy to use and is designed to be compatible with most existing memory technologies.
Conclusion
NAND08GW3f2AN6E memory is a type of Flash memory that is used in a wide variety of applications. It is fast, reliable, and low power, making it an ideal choice for applications that need fast data access, as well as long data retention periods. In addition, NAND Flash memory is very inexpensive and easy to use, making it a popular choice for many embedded systems and consumer electronic products.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
HPS-NAND-A | Intel | 175.0 $ | 1000 | STRATIX 10 HPS IO48 NAND ... |
NAND128W3A0AN6F | STMicroelect... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 48... |
QSHDC-NAND-A | Intel | 175.0 $ | 1000 | ARRIA 10 NAND DAUGHTER CA... |
QSHDC-SDM-NAND-A | Intel | 175.0 $ | 1000 | STRATIX 10 SDM NAND BOOT ... |
NAND256W3A2BN6F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256M PARALLEL 48... |
NAND256W3A2BN6F | STMicroelect... | -- | 1000 | IC FLASH 256M PARALLEL 48... |
NAND512W3A2SN6E | Micron Techn... | -- | 1000 | IC FLASH 512M PARALLEL 48... |
NAND512R3A2SZA6F | Micron Techn... | 0.0 $ | 1000 | IC FLASH 512M PARALLEL 63... |
NAND01GR3B2BZA6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
NAND128W3A0BN6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 48... |
NAND512W3A2BN6F | STMicroelect... | 0.0 $ | 1000 | IC FLASH 512M PARALLEL 48... |
NAND01GW3B2AN6F | STMicroelect... | -- | 1000 | IC FLASH 1G PARALLEL 48TS... |
NAND512R3A2AZA6E | STMicroelect... | 0.0 $ | 1000 | IC FLASH 512M PARALLEL 55... |
NAND256R3A2BZA6E | Micron Techn... | -- | 1000 | IC FLASH 256M PARALLEL 55... |
NAND08GW3D2AN6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G PARALLEL 48TS... |
NAND01GW3A0AN6E | STMicroelect... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
NAND128W3A2BN6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 48... |
NAND128W3A2BNXE | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 48... |
NAND512W3A2DN6E | Micron Techn... | -- | 1000 | IC FLASH 512M PARALLEL 48... |
AE-B55-NAND-2 | Phyton Inc. | 259.22 $ | 1000 | ADPT DIP40/BGA55 NAND FLA... |
NAND04GW3B2DN6E | Micron Techn... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
NAND512W3A2SE06 | Micron Techn... | 0.0 $ | 1000 | IC FLASH 512M PARALLELFLA... |
NAND16GW3B6DPA6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16G PARALLEL 114... |
NAND512W3A2SN6F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 512M PARALLEL 48... |
NAND02GR3B2DN6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
NAND08GAH0FZC5E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8G MMC 52MHZ 153... |
NAND01GW3A2AN6E | STMicroelect... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
NAND08GW3F2AN6E | Micron Techn... | -- | 1000 | IC FLASH 8G PARALLEL 48TS... |
NAND512W3A0AN6E | STMicroelect... | 0.0 $ | 1000 | IC FLASH 512M PARALLEL 48... |
NAND02GAH0LZC5E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G MMC 52MHZ 153... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...

LPDDR3 6G DIE 192MX32Memory IC

IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...

IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...

IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...

IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...
