Allicdata Part #: | 497-3615-ND |
Manufacturer Part#: |
NAND512R3A2AZA6E |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | STMicroelectronics |
Short Description: | IC FLASH 512M PARALLEL 55VFBGA |
More Detail: | FLASH - NAND Memory IC 512Mb (64M x 8) Parallel 6... |
DataSheet: | NAND512R3A2AZA6E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 512Mb (64M x 8) |
Write Cycle Time - Word, Page: | 60ns |
Access Time: | 60ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.95 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 55-TFBGA |
Supplier Device Package: | 55-VFBGA (8x10) |
Base Part Number: | NAND512 |
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NAND512R3A2AZA6E memory is an example of a non-volatile storage device. This type of storage device is important for many tasks and applications, including information storage and retrieval, data interchange, data communication and the daily computer operations.
NAND512R3A2AZA6E memory is a type of flash memory, which is a subset of Non-Volatile Random Access Memory (NVRAM). Flash memory is a type of NVRAM that has a smaller capacity than other types of NVRAM, and is generally less expensive. A key feature of flash memory is that it can store data permanently even when the power is turned off.
NAND512R3A2AZA6E memory has a wide range of applications. It is commonly used in digital cameras, computers, portable media players, digital audio players, USB flash drives, and other consumer electronic devices. This type of storage is also used in embedded systems, such as automobiles and security systems.
Since NAND512R3A2AZA6E memory is non-volatile, it can be used in mission critical applications, such as those related to aerospace, military, automotive, medical and industrial control systems. This makes NAND512R3A2AZA6E memory the most reliable storage solution for these applications.
The working principle of NAND512R3A2AZA6E memory is very simple. A NAND memory cell consists of two transistors connected in series, usually made of a variety of semiconductor materials. When the voltage applied to the transistors is low, the cell is said to be in the “off” state and no information is stored. When the voltage is increased, the transistors are switched “on”, and the information is stored in the cell.
The circuitry around the NAND512R3A2AZA6E memory cell is designed to detect and control the signal from the transistors. A digital signal is transmitted when the transistors are in an “off” state, while an analog signal is transmitted when the transistors are in an “on” state. This signal is then translated into binary data and stored in the memory cell.
NAND512R3A2AZA6E memory offers high storage density and speed. This makes it an ideal solution for both consumer and industrial applications. Due to its non-volatile nature, flash memory is the best choice for applications where data retention is essential, such as those related to safety and security.
NAND512R3A2AZA6E memory is also extremely energy efficient. It consumes less energy than other types of memory, such as SRAM and DRAM. Since it does not require regular refreshing to maintain its contents, it also has a longer lifespan than other types of memory.
As a storage solution, NAND512R3A2AZA6E memory offers many advantages. It is fast, reliable, and energy efficient, and is also widely used in a variety of applications. It is therefore the ideal choice for a wide range of tasks and applications.
The specific data is subject to PDF, and the above content is for reference
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