NAND02GW3B2AN6F Allicdata Electronics
Allicdata Part #:

NAND02GW3B2AN6F-ND

Manufacturer Part#:

NAND02GW3B2AN6F

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: STMicroelectronics
Short Description: IC FLASH 2G PARALLEL 48TSOP
More Detail: FLASH - NAND Memory IC 2Gb (256M x 8) Parallel 30...
DataSheet: NAND02GW3B2AN6F datasheetNAND02GW3B2AN6F Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (256M x 8)
Write Cycle Time - Word, Page: 30ns
Access Time: 30ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP
Base Part Number: NAND02G
Description

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Memory is a key part of a computer, it stores and supplies data to the processor for further processing and provides a platform for a variety of interactive features to take place. NAND02GW3B2AN6F is a device belonging to the class of flash memory, which is a kind of non-volatile memory, which means the information stored in the device will be available even if the power supply is removed.

The NAND02GW3B2AN6F is a Flash memory chip, which is compatible with the OneNAND interface. Specifically, it is a 3-gigabit version of the 8 gigabit OneNAND memory chip, indicated by the "02" in "NAND02GW3B2AN6F". The "GW3B2AN6F" signifies the integrated multichannel controller and the type of NAND Flash memory.

The NAND02GW3B2AN6F main application field covers a range of industrial and consumer electronics applications. In industrial electronics, these also include industrial control systems, handheld devices, navigation systems, as well as automotive and medical devices. As for consumer electronics, this device is used in the production of smartphones, tablets, digital cameras, media players and other compact electronics.

The working principle of the NAND02GW3B2AN6F is closely related to that of its parent device, the NAND Flash. It allows the writing of large blocks of data in real time, with a read-write speed of up to 166 MB/s. It has an endurance rate of 10,000 Write/Erase cycles, a Power-Loss-Retentive Mode and an advanced Powersaver feature.

The NAND02GW3B2AN6F also allows for the use of multiple levels of error correction algorithms. It utilizes an Integrated Multi-Channel Controller architecture, granting users access to a maximum of 8 independent or simultaneous channels. In order to satisfy the requirements of the different applications, this device is also capable of virtual good block management, with as many as 4096 virtual good blocks.

The NAND02GW3B2AN6F is an ideal device for industrial and consumer electronics applications, due to its advanced features and specifications. It offers reliable and secure performance, allowing for fast and efficient data transfer and storage. Therefore, it is an ideal choice for applications that demand fast read-write speeds and high endurance rates, such as industrial and consumer electronics.

The specific data is subject to PDF, and the above content is for reference

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