NAND256W3A2BZAXE Allicdata Electronics
Allicdata Part #:

NAND256W3A2BZAXE-ND

Manufacturer Part#:

NAND256W3A2BZAXE

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 256M PARALLEL 55VFBGA
More Detail: FLASH - NAND Memory IC 256Mb (32M x 8) Parallel 5...
DataSheet: NAND256W3A2BZAXE datasheetNAND256W3A2BZAXE Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Mb (32M x 8)
Write Cycle Time - Word, Page: 50ns
Access Time: 50ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 55-TFBGA
Supplier Device Package: 55-VFBGA (8x10)
Base Part Number: NAND256
Description

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NAND256W3A2BZAXE is a type of non-volatile memory created in the late 20th century. Its name originates from the fact that it provides a storage capacity up to 256 words. This type of memory often found in many everyday items like computers, digital cameras, and other popular electronics. NAND256W3A2BZAXE can retain information even if power is lost, making it extremely useful in scenarios when power outages are possible.

NAND256W3A2BZAXE is often used for storing digital information such as images, music, and text files. This type of memory is used in many devices because it is relatively small and relatively inexpensive when compared to other types of non-volatile memory. Additionally, NAND256W3A2BZAXE is very reliable and often used in items such as flash memory cards and USB sticks.

The working principle of NAND256W3A2BZAXE is based around the concept of electrical charge stored in insulated floating gates. When electrical voltage is applied to the cell, the stored charges are transferred onto two transistors known as the source and drain of the memory cell. This transfer of charge produces a voltage potential difference between the two transistors, and this potential difference is used to denote either a 0 or 1 value. The written state of the memory cell can be read by measuring the potential difference between the two transistors.

NAND256W3A2BZAXE memory is widely used in a variety of applications including portable electronic devices such as smart phones and tablets, digital cameras, and USB mass storage devices. Many computer systems employ this type of memory for booting the operating system, as well as loading programs and BIOS data. NAND256W3A2BZAXE memory is also often used in automotive applications such as vehicle navigation systems and audio systems.

NAND256W3A2BZAXE memory is a type of non-volatile memory that is used in a wide variety of consumer products. It works by storing electrical charge in insulated floating gates, which can be read by measuring the voltage potential difference between two transistors. NAND256W3A2BZAXE is often used in computer systems, portable electronic devices, digital cameras, automotive systems, and USB mass storage devices.

The specific data is subject to PDF, and the above content is for reference

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