| Allicdata Part #: | NAND128W3A0AN6E-ND |
| Manufacturer Part#: |
NAND128W3A0AN6E |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | STMicroelectronics |
| Short Description: | IC FLASH 128M PARALLEL 48TSOP |
| More Detail: | FLASH - NAND Memory IC 128Mb (16M x 8) Parallel 5... |
| DataSheet: | NAND128W3A0AN6E Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tray |
| Part Status: | Obsolete |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NAND |
| Memory Size: | 128Mb (16M x 8) |
| Write Cycle Time - Word, Page: | 50ns |
| Access Time: | 50ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 2.7 V ~ 3.6 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package: | 48-TSOP |
| Base Part Number: | NAND128 |
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NAND128W3A0AN6E is a type of memory that belongs to the category of non-volatile memory. It is often referred to as flash memory, due to its unique way of storing data without the need for an external power source. NAND128W3A0AN6E is primarily used in portable devices and embedded systems.
In practice, a NAND128W3A0AN6E module works by storing data in blocks of memory, which are written to and erased through the application of a specific type of electric charge. This charge is usually referred to as “cycling”, and can be applied either in-circuit or through special devices called “programmers”. This method of storing data is beneficial because data can be written and erased several times without wearing out the memory itself.
The application of NAND128W3A0AN6E memory is widespread and has been adopted in a variety of different industries. It is often used in storage applications, such as USB drives, SD cards, and other low-cost portable memory solutions. Additionally, NAND128W3A0AN6E memory is used extensively in embedded systems, such as automotive and aerospace applications. This type of memory is also used in some smartphones and cell phones, allowing them to store large amounts of data without sacrificing device speed.
NAND128W3A0AN6E memory offers a number of key advantages over other types of memory, particularly when used in embedded applications. First, its high speed, low power consumption, and small physical size make it an attractive option for embedded applications. Additionally, its ability to write and erase data several times ensures that data is secure and reliable. Finally, its low cost relative to other types of memory makes it an ideal choice for budget-minded consumers.
NAND128W3A0AN6E memory stands apart from other types of memory due to its unique working principle. Memory is written to and erased through the physical application of an electrical charge. This charge is usually referred to as “cycling”, and can be applied either in-circuit or through special devices called “programmers”. This method of storing data enables NAND128W3A0AN6E memory to be written and erased several times without wearing out the memory itself. Additionally, NAND128W3A0AN6E memory uses a special circuit arrangement in order to store data in a more efficient manner, allowing it to hold more data while using less space.
Overall, NAND128W3A0AN6E memory is a fast, reliable, and cost-effective type of memory. Its unique working principle enables it to store large amounts of data without sacrificing device speed, and its high speed, low power consumption, and small physical size make it an attractive option for embedded systems, storage applications, and portable devices. With its wide range of uses and numerous advantages, it is no wonder that NAND128W3A0AN6E memory is becoming increasingly popular across a variety of industries.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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| NAND512W3A2BZA6E | STMicroelect... | -- | 1000 | IC FLASH 512M PARALLEL 63... |
| NAND128W3A0BN6F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 48... |
| NAND512W3A2CN6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 512M PARALLEL 48... |
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| NAND256W3A0BZA6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256M PARALLEL 55... |
| NAND16GW3D2BN6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16G PARALLEL 48T... |
| NAND256W3A2BZA6F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256M PARALLEL 55... |
| NAND512W3A2SZA6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 512M PARALLEL 63... |
| NAND128W3AABN6F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 48... |
| NAND02GW3B2DN6E | Micron Techn... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
| NAND02GW3B2DZA6E | Micron Techn... | -- | 23963 | IC FLASH 2G PARALLEL 63VF... |
| NAND512R3A2BZA6E | STMicroelect... | 0.0 $ | 1000 | IC FLASH 512M PARALLEL 63... |
| NAND128W3A2BN6F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 48... |
| NAND128W3A0AN6F | STMicroelect... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 48... |
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NAND128W3A0AN6E Datasheet/PDF