NAND512R3A2SE06 Allicdata Electronics
Allicdata Part #:

NAND512R3A2SE06-ND

Manufacturer Part#:

NAND512R3A2SE06

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 512M PARALLEL
More Detail: FLASH - NAND Memory IC 512Mb (64M x 8) Parallel 5...
DataSheet: NAND512R3A2SE06 datasheetNAND512R3A2SE06 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Mb (64M x 8)
Write Cycle Time - Word, Page: 50ns
Access Time: 50ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

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When it comes to memory technology, NAND flash memory is a powerful tool for modern computing applications. NAND512R3A2SE06 is one of the latest offering from Samsung and it has some impressive features as compared to its predecessors. It has 512 megabits of storage capacity with a read and write speed of up to 6.9MB/s and 5.4MB/s respectively. Apart from this, it also features 200 million erase/program cycles, along with a low write failure rate of less than 0.0005%.

In the industry, NAND512R3A2SE06 offers various applications in both the consumer and industrial sector. For instance, in the consumer segment, the device provides fast storage solutions in digital cameras and camcorders, where it assists in fast image capturing and data storage. It is also a great choice for portable storage media and music players such as Apple’s iPod and various other digital media players.

In the industrial sector, the device can be used in various memory intensive applications such as netbooks and notebooks, routers, NAS (Network Attached Storage) drives and other kinds of embedded systems. It can also be used in certain medical and scientific equipments which require data storage for diagnostic and analysis purposes.

In terms of the working principle, NAND512R3A2SE06 uses the NAND flash memory technology which is based upon the use of floating-gate transistors. A transistor can act as a switch and store charge on the floating-gate which is located between the two gates of the device. These transistors also enable data to be stored during write operations and provide access to the stored data during read operations. Since the data is stored on a regular basis, the device is also capable of performing fast read and write operations, while at the same time providing the reliability that is necessary for any critical data storage needs.

The flash drive is capable of performing various operations such as erase, program, read, write, and sector lock operations with a certain amount of overhead that transfer data from the host system to the NAND memory cell. This overhead is primarily due to the necessity of controlling the data flow in the device and requires the use of a controller to perform the operations. The controllers are designed to enable the NAND512R3A2SE06 to execute these operations within a reasonable time frame, while at the same time ensuring that the data is accurately transferred between the two.

To sum up, NAND512R3A2SE06 is a great example of a powerful and reliable memory device that can handle both consumer and industrial applications. It offers fast read and write speeds, along with a low write failure rate, making it a great choice for any data storage needs. Therefore, it is an ideal choice for portable storage media, digital cameras, netbooks, and other memory-intensive applications.

The specific data is subject to PDF, and the above content is for reference

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