Allicdata Part #: | NAND512R3A2CZA6E-ND |
Manufacturer Part#: |
NAND512R3A2CZA6E |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 512M PARALLEL 63VFBGA |
More Detail: | FLASH - NAND Memory IC 512Mb (64M x 8) Parallel 5... |
DataSheet: | NAND512R3A2CZA6E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 512Mb (64M x 8) |
Write Cycle Time - Word, Page: | 50ns |
Access Time: | 50ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.95 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 63-TFBGA |
Supplier Device Package: | 63-VFBGA (9x11) |
Base Part Number: | NAND512-A |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NAND512R3A2CZA6E is an integrated memory research module powered by several types of NAND Flash storage. It is widely used in consumer electronics and other applications that require a small form factor, a high capacity of memory, and large storage solutions. The research module supports native NAND-to-NAND and NAND-to-host communications, as well as NAND flash integration protocols.
As one of the latest product of NAND Flash type memory, NAND512R3A2CZA6E features the capability of built-in graphics. It provides a user-friendly interface for displaying and managing text and graphical files. This interface allows users to easily access the content from the devices with a few clicks.
The NAND512R3A2CZA6E is a single chip device consisting of two 64Gbit NAND Flash memory chips. The chips are laid out in two rows with an area of 256mm2 and can be programmed with data. With the support of the NAND Flash controller, the NAND Flash memory chips can be used to store various types of data. This includes text files, images, music files, and video files. The controller also provides support for the use of wear leveling algorithms to enable the memory to maintain a high level of data integrity across a wide range of operating temperatures.
The NAND512R3A2CZA6E Application Field and Working Principle involves the technology of NAND Flash memory and the use of NAND controllers. The NAND Memory consists of an array of memory cells and an array of NAND controllers, which process the data which is sent to it. The controller can also interact with other parts of the system such as the CPU, USB ports, and Bluetooth. The NAND Controller is capable of handling multiple operations, including reading and writing data, erasing and programming data, and analyzing the quality of the data stored in the NAND Flash memory.
The operation of the NAND512R3A2CZA6E starts with a basic level of programming where the NAND Flash memory is programmed with the desired data. This data is then read from the NAND Flash memory by the NAND controller and then copied to the CPU memory. The controller then processes this data in accordance with the instructions provided. These instructions are designed to provide seamless and smooth execution of operations on the NAND flash memory.
Once the programming of the NAND512R3A2CZA6E has been completed, the device then begins to provide support for various operations that can take place on the device. This includes data transfer, management, and protection. Data transfer is the basic level of communication wherein data is sent from the device to the host computer, and from the host computer to the device. Data management involves the adjustment of the device’s settings such as the instruction set and the type of data stored within the device. Finally, data protection serves to protect the device from unauthorized access and to keep stored data safe and secure.
Since the NAND512R3A2CZA6E is a relatively new type of memory device, its performance in various applications is yet to be established. It is expected, however, that the device will become an increasingly popular choice due to its small size, high capacity, and low power consumption. Many manufacturers have already adopted the use of such a device in the development of their devices. As the device proves its worth in various applications, it is likely that its use will continue to expand.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
AE-B55-NAND-2 | Phyton Inc. | 259.22 $ | 1000 | ADPT DIP40/BGA55 NAND FLA... |
AE-TS48-NAND-2 | Phyton Inc. | 0.0 $ | 1000 | ADAPTER SOCKET 48-TSOP TO... |
AE-TS48-NAND-4 | Phyton Inc. | 105.0 $ | 1000 | ADAPTER SOCKET 48-TSOP TO... |
QSHDC-NAND-A | Intel | 175.0 $ | 1000 | ARRIA 10 NAND DAUGHTER CA... |
HPS-NAND-A | Intel | 175.0 $ | 1000 | STRATIX 10 HPS IO48 NAND ... |
QSHDC-SDM-NAND-A | Intel | 175.0 $ | 1000 | STRATIX 10 SDM NAND BOOT ... |
NAND01GW3B2AN6F | STMicroelect... | -- | 1000 | IC FLASH 1G PARALLEL 48TS... |
NAND01GW4B2AN6E | STMicroelect... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
NAND02GW3B2AN6F | STMicroelect... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
NAND128W3A0AN6 | STMicroelect... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 48... |
NAND128W3A0AN6E | STMicroelect... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 48... |
NAND128W3A0AN6F | STMicroelect... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 48... |
NAND128W3A0BN6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 48... |
NAND128W3A0BN6F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 48... |
NAND128W3A2BN6F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 48... |
NAND256R3A2BZA6E | Micron Techn... | -- | 1000 | IC FLASH 256M PARALLEL 55... |
NAND256W3A0AN6 | STMicroelect... | -- | 1000 | IC FLASH 256M PARALLEL 48... |
NAND256W3A0AN6F | STMicroelect... | 0.0 $ | 1000 | IC FLASH 256M PARALLEL 48... |
NAND256W3A2BN6F | STMicroelect... | -- | 1000 | IC FLASH 256M PARALLEL 48... |
NAND512R3A2BZA6E | STMicroelect... | 0.0 $ | 1000 | IC FLASH 512M PARALLEL 63... |
NAND512W3A0AN6 | STMicroelect... | 0.0 $ | 1000 | IC FLASH 512M PARALLEL 48... |
NAND512W3A2BN6F | STMicroelect... | 0.0 $ | 1000 | IC FLASH 512M PARALLEL 48... |
NAND01GR3B2BZA6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
NAND01GW3B2BZA6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
NAND01GW3B2CN6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
NAND02GR3B2DZA6E | Micron Techn... | -- | 1000 | IC FLASH 2G PARALLEL 63VF... |
NAND02GW3B2DN6E | Micron Techn... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
NAND02GW3B2DZA6E | Micron Techn... | -- | 23963 | IC FLASH 2G PARALLEL 63VF... |
NAND04GW3B2DN6E | Micron Techn... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
NAND512R3A2CZA6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 512M PARALLEL 63... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...
LPDDR3 6G DIE 192MX32Memory IC
IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...
IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...
IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...
IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...