NAND01GW3B2CN6E Allicdata Electronics
Allicdata Part #:

NAND01GW3B2CN6E-ND

Manufacturer Part#:

NAND01GW3B2CN6E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 1G PARALLEL 48TSOP
More Detail: FLASH - NAND Memory IC 1Gb (128M x 8) Parallel 25...
DataSheet: NAND01GW3B2CN6E datasheetNAND01GW3B2CN6E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP
Base Part Number: NAND01G-A
Description

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NAND01GW3B2CN6E is a type of memory device developed by Toshiba. It is currently in use in a variety of applications ranging from handheld devices to automotive systems. The device offers a range of features, including low power consumption and an advanced high-speed interface. In addition, it provides a high-capacity memory solution that is suitable for use in a wide range of applications.

At its most basic, NAND01GW3B2CN6E stores large amounts of data by using the NAND logic gate. The NAND gate is a logic gate which returns true output if one of its inputs is false. By using this gate, NAND01GW3B2CN6E can store large amounts of data in a very small package. This is especially useful for applications where space is at a premium, such as handheld devices and automotive systems.

The NAND01GW3B2CN6E is available in different methods of organization, including asynchronous and synchronous. Asynchronous devices are capable of storing data in a non-volatile manner, while synchronous devices can store and retrieve data with a constant clock frequency. The NAND01GW3B2CN6E is available in both configurations, enabling it to be used in a variety of applications.

The device\'s interface provides the foundation for the NAND01GW3B2CN6E\'s performance. It includes an 8-bit or 16-bit data bus, as well as a 2-bit or 4-bit command bus. This allows for fast and efficient access to data, enabling the device to offer a high-speed data transfer rate. Additionally, the NAND01GW3B2CN6E also includes a built-in self-correcting error correction code, which helps ensure that data is stored and retrieved correctly.

The NAND01GW3B2CN6E is capable of providing an efficient way of storing and retrieving data, making it ideal for a wide range of applications. The device\'s high-speed, low-power capabilities make it suitable for use in handheld devices, automotive systems, and other portable equipment. Thanks to its advanced interface, it is also capable of providing a high-capacity memory solution, providing users with a reliable way of managing large amounts of data.

The specific data is subject to PDF, and the above content is for reference

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