Allicdata Part #: | NAND01GW3B2CN6E-ND |
Manufacturer Part#: |
NAND01GW3B2CN6E |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 1G PARALLEL 48TSOP |
More Detail: | FLASH - NAND Memory IC 1Gb (128M x 8) Parallel 25... |
DataSheet: | NAND01GW3B2CN6E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 1Gb (128M x 8) |
Write Cycle Time - Word, Page: | 25ns |
Access Time: | 25ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 48-TSOP |
Base Part Number: | NAND01G-A |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
NAND01GW3B2CN6E is a type of memory device developed by Toshiba. It is currently in use in a variety of applications ranging from handheld devices to automotive systems. The device offers a range of features, including low power consumption and an advanced high-speed interface. In addition, it provides a high-capacity memory solution that is suitable for use in a wide range of applications.
At its most basic, NAND01GW3B2CN6E stores large amounts of data by using the NAND logic gate. The NAND gate is a logic gate which returns true output if one of its inputs is false. By using this gate, NAND01GW3B2CN6E can store large amounts of data in a very small package. This is especially useful for applications where space is at a premium, such as handheld devices and automotive systems.
The NAND01GW3B2CN6E is available in different methods of organization, including asynchronous and synchronous. Asynchronous devices are capable of storing data in a non-volatile manner, while synchronous devices can store and retrieve data with a constant clock frequency. The NAND01GW3B2CN6E is available in both configurations, enabling it to be used in a variety of applications.
The device\'s interface provides the foundation for the NAND01GW3B2CN6E\'s performance. It includes an 8-bit or 16-bit data bus, as well as a 2-bit or 4-bit command bus. This allows for fast and efficient access to data, enabling the device to offer a high-speed data transfer rate. Additionally, the NAND01GW3B2CN6E also includes a built-in self-correcting error correction code, which helps ensure that data is stored and retrieved correctly.
The NAND01GW3B2CN6E is capable of providing an efficient way of storing and retrieving data, making it ideal for a wide range of applications. The device\'s high-speed, low-power capabilities make it suitable for use in handheld devices, automotive systems, and other portable equipment. Thanks to its advanced interface, it is also capable of providing a high-capacity memory solution, providing users with a reliable way of managing large amounts of data.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
AE-B55-NAND-2 | Phyton Inc. | 259.22 $ | 1000 | ADPT DIP40/BGA55 NAND FLA... |
AE-TS48-NAND-2 | Phyton Inc. | 0.0 $ | 1000 | ADAPTER SOCKET 48-TSOP TO... |
AE-TS48-NAND-4 | Phyton Inc. | 105.0 $ | 1000 | ADAPTER SOCKET 48-TSOP TO... |
QSHDC-NAND-A | Intel | 175.0 $ | 1000 | ARRIA 10 NAND DAUGHTER CA... |
HPS-NAND-A | Intel | 175.0 $ | 1000 | STRATIX 10 HPS IO48 NAND ... |
QSHDC-SDM-NAND-A | Intel | 175.0 $ | 1000 | STRATIX 10 SDM NAND BOOT ... |
NAND01GW3B2AN6F | STMicroelect... | -- | 1000 | IC FLASH 1G PARALLEL 48TS... |
NAND01GW4B2AN6E | STMicroelect... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
NAND02GW3B2AN6F | STMicroelect... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
NAND128W3A0AN6 | STMicroelect... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 48... |
NAND128W3A0AN6E | STMicroelect... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 48... |
NAND128W3A0AN6F | STMicroelect... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 48... |
NAND128W3A0BN6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 48... |
NAND128W3A0BN6F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 48... |
NAND128W3A2BN6F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 48... |
NAND256R3A2BZA6E | Micron Techn... | -- | 1000 | IC FLASH 256M PARALLEL 55... |
NAND256W3A0AN6 | STMicroelect... | -- | 1000 | IC FLASH 256M PARALLEL 48... |
NAND256W3A0AN6F | STMicroelect... | 0.0 $ | 1000 | IC FLASH 256M PARALLEL 48... |
NAND256W3A2BN6F | STMicroelect... | -- | 1000 | IC FLASH 256M PARALLEL 48... |
NAND512R3A2BZA6E | STMicroelect... | 0.0 $ | 1000 | IC FLASH 512M PARALLEL 63... |
NAND512W3A0AN6 | STMicroelect... | 0.0 $ | 1000 | IC FLASH 512M PARALLEL 48... |
NAND512W3A2BN6F | STMicroelect... | 0.0 $ | 1000 | IC FLASH 512M PARALLEL 48... |
NAND01GR3B2BZA6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
NAND01GW3B2BZA6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
NAND01GW3B2CN6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
NAND02GR3B2DZA6E | Micron Techn... | -- | 1000 | IC FLASH 2G PARALLEL 63VF... |
NAND02GW3B2DN6E | Micron Techn... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
NAND02GW3B2DZA6E | Micron Techn... | -- | 23963 | IC FLASH 2G PARALLEL 63VF... |
NAND04GW3B2DN6E | Micron Techn... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
NAND512R3A2CZA6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 512M PARALLEL 63... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...
LPDDR3 6G DIE 192MX32Memory IC
IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...
IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...
IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...
IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...