NAND256W3A0BZA6E Allicdata Electronics
Allicdata Part #:

NAND256W3A0BZA6E-ND

Manufacturer Part#:

NAND256W3A0BZA6E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 256M PARALLEL 55VFBGA
More Detail: FLASH - NAND Memory IC 256Mb (32M x 8) Parallel 5...
DataSheet: NAND256W3A0BZA6E datasheetNAND256W3A0BZA6E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Mb (32M x 8)
Write Cycle Time - Word, Page: 50ns
Access Time: 50ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 55-TFBGA
Supplier Device Package: 55-VFBGA (8x10)
Base Part Number: NAND256-A
Description

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NAND256W3A0BZA6E, also known as U-NAND, is a type of memory technology used in a variety of applications that require high performance and data storage capacity. It is a form of non-volatile memory, meaning that the data remains stored even when power is removed from the device. U-NAND is one of the more advanced memory technologies, offering high interface speeds, reliable storage, and high storage capacities. This makes it an ideal choice for applications that need to handle large amounts of data quickly.

The NAND256W3A0BZA6E can be found in many application fields, including consumer electronics, industrial automation, automotive, consumer electronics, mobile applications, and server data storage. The U-NAND memory is reliable and has a high level of performance and capacity. It is often used in applications that require data storage and long-term reliability. U-NAND can also be used in consumer electronics such as smartphones and tablets, where it provides a higher capacity, faster read and write times, and better reliability than other types of non-volatile memory such as NOR flash.

The NAND256W3A0BZA6E works by using charge-based transistors to store information. It is durable and resistant to physical damage and can be used in a variety of environments where other memory technologies may not be suitable. U-NAND is also highly reliable, with an approximate 10^12 write cycle endurance, which means that the device can reliably store an enormous amount of data over its lifetime.

U-NAND also offers efficient power consumption. It reduces the amount of power required for accessing data, which helps to improve the energy efficiency of applications that use the memory technology. U-NAND’s low-power operation results in longer battery life in systems and devices that utilize the technology.

The NAND256W3A0BZA6E is an important memory technology used in many applications. It offers high performance in terms of speed, capacity, and reliability and low power consumption. This makes U-NAND an ideal choice for applications that need to store and access large amounts of data over a long period of time.

The specific data is subject to PDF, and the above content is for reference

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