Allicdata Part #: | NAND512W3A0AN6-ND |
Manufacturer Part#: |
NAND512W3A0AN6 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | STMicroelectronics |
Short Description: | IC FLASH 512M PARALLEL 48TSOP |
More Detail: | FLASH - NAND Memory IC 512Mb (64M x 8) Parallel 5... |
DataSheet: | NAND512W3A0AN6 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 512Mb (64M x 8) |
Write Cycle Time - Word, Page: | 50ns |
Access Time: | 50ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 48-TSOP |
Base Part Number: | NAND512 |
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NAND512w3A0AN6, also known as NAND Flash, is a type of non-volatile memory for storing digital data on a solid-state drive. It is a type of flash memory technology, which is a type of non-volatile memory that does not require power to retain data. It is typically used in modern electronic devices like computers, cameras, and phones that require the storage of large amounts of data in a quick, energy-efficient manner.
The NAND Flash memory is divided into two main categories: Single Level Cell (SLC) and Multi Level Cell (MLC). SLC memory provides superior performance and durability, but costs more than MLC memory. In addition to cost, SLC also consumes more power than MLC as it stores more data per memory cell.
The NAND512w3A0AN6 is an SLC Flash memory, meaning it has a faster write speed than its MLC counterparts. This type of Flash memory is used in industrial applications, automotive infotainment systems, and embedded systems, as it provides the highest level of performance in those categories. This type of memory has the capability to store hundreds of gigabytes of data in a small form factor, making it ideal for use in embedded systems.
NAND memory is based on a “floating-gate transistor cell” technology, which allows for the storage of data without consuming power. In NAND Flash, the data is stored in a floating-gate transistor that works by trapping the electrons in a trapped space or tunneling them to their destination. When the device is in a “write” state, electrons are injected into the floating-gate transistor, changing its state and thus the data stored in it. The electrons are then passed to their destination using a voltage applied by the device. When the device is in a “read” state, a voltage is applied to the floating-gate transistor that causes the electrons to tunnel out, thus storing the data.
NAND512w3A0AN6 Flash is a reliable, high-performance Flash memory. It is widely used in mobile devices, industrial applications, and automotive applications due to its cost efficiency, high write speed, and wide voltage range. It also has excellent error correction and rewrite capabilities, making it an ideal solution for mission-critical applications. NAND Flash is also suitable for storing large amounts of data in a small form factor, making it ideal for embedded system applications.
The specific data is subject to PDF, and the above content is for reference
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