NGTD13T65F2SWK Discrete Semiconductor Products |
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| Allicdata Part #: | NGTD13T65F2SWK-ND |
| Manufacturer Part#: |
NGTD13T65F2SWK |
| Price: | $ 1.24 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | IGBT TRENCH FIELD STOP 650V DIE |
| More Detail: | IGBT Trench Field Stop 650V Surface Mount Die |
| DataSheet: | NGTD13T65F2SWK Datasheet/PDF |
| Quantity: | 1000 |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 188 +: | $ 1.12720 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Lead Free Status / RoHS Status: | -- |
| Part Status: | Active |
| IGBT Type: | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max): | 650V |
| Current - Collector Pulsed (Icm): | 120A |
| Vce(on) (Max) @ Vge, Ic: | 2.2V @ 15V, 30A |
| Switching Energy: | -- |
| Input Type: | Standard |
| Td (on/off) @ 25°C: | -- |
| Test Condition: | -- |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | Die |
| Supplier Device Package: | Die |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction
The NGTD13T65F2SWK is a single IGBT that is part of the Alternistor family of products offered by NGT Energy. It is a high-efficiency device that provides superior performance in many applications. It is a device that is capable of controlling currents up to 20A and offers a wide range of features that make it a great choice for many applications.Application Field
The NGTD13T65F2SWK is designed for use in many types of applications. It is ideal for use in a variety of industrial, medical, and consumer applications. It can be used for motor control, power switching, and power supply regulation. It is also ideal for use in solar energy systems, UPS systems, energy storage solutions, and any other application that requires high power efficiency and performance.The NGTD13T65F2SWK is ideal for use in many automotive applications. It is well suited for use in motor control and power switching applications. It can also be used in electric vehicle and other transportation applications. Its high power efficiency makes it an ideal choice for these kinds of applications.The NGTD13T65F2SWK can also be used in power conversion applications. It is capable of controlling large loads reliably and efficiently. This makes it ideal for use in renewable energy projects such as solar and wind power.Working Principle
At its most basic level, the NGTD13T65F2SWK is an insulated gate bipolar transistor (IGBT). It works by applying a voltage or current to the gate of the transistor, which then controls the current flowing between the collector and the emitter. The voltage or current applied to the gate can be either on or off and can be used to control a wide range of loads.The NGTD13T65F2SWK is designed to work at high frequencies. By controlling the gate voltage, the current through the IGBT can be precisely controlled. This allows for a high level of control over the power that is being supplied to an application or system.The NGTD13T65F2SWK also has a wide range of protection features. It is designed to protect itself and other components from thermal overloads and short circuits. Its ability to handle large electrical loads makes it ideal for use in many industrial applications.Conclusion
The NGTD13T65F2SWK is a single IGBT with a wide range of features that make it ideal for use in many applications. Its ability to control large electrical loads and offer protection from thermal overloads and short circuits makes it an excellent choice for many industrial, consumer and medical applications. Its high power efficiency and wide range of operation make it a great choice for a variety of power conversion applications.The specific data is subject to PDF, and the above content is for reference
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| NGTD23T120F2WP | ON Semicondu... | 2.06 $ | 1000 | IGBT TRENCH FIELD STOP 12... |
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| NGTD14T65F2WP | ON Semicondu... | 1.23 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
| NGTD14T65F2SWK | ON Semicondu... | 1.24 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
| NGTD13T65F2WP | ON Semicondu... | 1.23 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
| NGTD8R65F2WP | ON Semicondu... | 0.38 $ | 1000 | DIODE GEN PURP 650V DIEDi... |
| NGTD28T65F2SWK | ON Semicondu... | 2.85 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
| NGTD5R65F2SWK | ON Semicondu... | 0.25 $ | 1000 | DIODE GEN PURP 650V DIEDi... |
| NGTD30T120F2WP | ON Semicondu... | 3.12 $ | 1000 | IGBT TRENCH FIELD STOP 12... |
| NGTD13T65F2SWK | ON Semicondu... | 1.24 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
| NGTD13R120F2WP | ON Semicondu... | 0.69 $ | 1000 | DIODE GEN PURP 1.2KV DIED... |
| NGTD21T65F2SWK | ON Semicondu... | 1.8 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
| NGTD15R65F2SWK | ON Semicondu... | 0.73 $ | 1000 | DIODE GEN PURP 650V DIEDi... |
| NGTD28T65F2WP | ON Semicondu... | 2.81 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
| NGTD17R120F2SWK | ON Semicondu... | 0.85 $ | 1000 | DIODE GEN PURP 1.2KV DIED... |
| NGTD17T65F2WP | ON Semicondu... | 1.44 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
| NGTD20T120F2WP | ON Semicondu... | 1.69 $ | 1000 | IGBT TRENCH FIELD STOP 12... |
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NGTD13T65F2SWK Datasheet/PDF