NGTD13T65F2WP Discrete Semiconductor Products |
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Allicdata Part #: | NGTD13T65F2WP-ND |
Manufacturer Part#: |
NGTD13T65F2WP |
Price: | $ 1.23 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT TRENCH FIELD STOP 650V DIE |
More Detail: | IGBT Trench Field Stop 650V Surface Mount Die |
DataSheet: | NGTD13T65F2WP Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
190 +: | $ 1.11311 |
Series: | -- |
Packaging: | Bulk |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Current - Collector Pulsed (Icm): | 120A |
Vce(on) (Max) @ Vge, Ic: | 2.2V @ 15V, 30A |
Switching Energy: | -- |
Input Type: | Standard |
Td (on/off) @ 25°C: | -- |
Test Condition: | -- |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | Die |
Supplier Device Package: | Die |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Transistors have been around for hundreds of years and have many uses. They are the main component of computers, radios, and other electrical devices. In the modern world, transistors are essential in the production of any sort of circuit.The NGTD13T65F2WP is a type of transistor, specifically an Insulated-Gate Bipolar Transistor (IGBT). An IGBT is a three-terminal power semiconducting device, which essentially functions as a switching element in power management circuits. The distinct characteristics of the NGTD13T65F2WP makes it a great transistor for a variety of applications. It has an extremely fast switching speed, a very low on-state voltage drop, and a high level of withstanding voltage drop. It also offers a lesser temperature rise and low noise. For these reasons, the NGTD13T65F2WP is frequently used in applications such as power converters, welding machines, air conditioners, computer power supplies, and any high-power switching systems.The working principle of an IGBT is similar to that of a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). That is, it consists of three layers; an N-type layer sandwiched between two P-type layers. The IGBT works by altering the voltage across the gate-source, which then changes the current flow between the source and drain.Generally, the current flowing through the IGBT depends upon two different states; the Cut-off State and the Active-Conduction State. In the Cut-off State, the voltage across the gate-stop junction is too small to allow any current flow through the device and thus, the device is off or inactive. On the other hand, when sufficient voltage is applied to the base-drain junction, the N-type layer is activated and thus, current can now flow between the source and drain.This type of transistor is a very useful device and has become increasingly popular in the electrical engineering world in recent years. The NGTD13T65F2WP is a highly efficient, compact and powerful device, making it an ideal choice for any application that requires a powerful, high-speed switching element.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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NGTD13T65F2WP | ON Semicondu... | 1.23 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
NGTD14T65F2WP | ON Semicondu... | 1.23 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
NGTD13T65F2SWK | ON Semicondu... | 1.24 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
NGTD14T65F2SWK | ON Semicondu... | 1.24 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
NGTD17T65F2WP | ON Semicondu... | 1.44 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
NGTD17T65F2SWK | ON Semicondu... | 1.46 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
NGTD20T120F2WP | ON Semicondu... | 1.69 $ | 1000 | IGBT TRENCH FIELD STOP 12... |
NGTD20T120F2SWK | ON Semicondu... | 1.72 $ | 1000 | IGBT TRENCH FIELD STOP 12... |
NGTD21T65F2WP | ON Semicondu... | 1.78 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
NGTD21T65F2SWK | ON Semicondu... | 1.8 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
NGTD23T120F2WP | ON Semicondu... | 2.06 $ | 1000 | IGBT TRENCH FIELD STOP 12... |
NGTD23T120F2SWK | ON Semicondu... | 2.07 $ | 1000 | IGBT TRENCH FIELD STOP 12... |
NGTD28T65F2WP | ON Semicondu... | 2.81 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
NGTD28T65F2SWK | ON Semicondu... | 2.85 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
NGTD30T120F2WP | ON Semicondu... | 3.12 $ | 1000 | IGBT TRENCH FIELD STOP 12... |
NGTD30T120F2SWK | ON Semicondu... | 3.14 $ | 1000 | IGBT TRENCH FIELD STOP 12... |
NGTD5R65F2WP | ON Semicondu... | 0.24 $ | 1000 | DIODE GEN PURP 650V DIEDi... |
NGTD5R65F2SWK | ON Semicondu... | 0.25 $ | 1000 | DIODE GEN PURP 650V DIEDi... |
NGTD8R65F2WP | ON Semicondu... | 0.38 $ | 1000 | DIODE GEN PURP 650V DIEDi... |
NGTD8R65F2SWK | ON Semicondu... | 0.39 $ | 1000 | DIODE GEN PURP 650V DIEDi... |
NGTD9R120F2WP | ON Semicondu... | 0.41 $ | 1000 | DIODE GEN PURP 1.2KV DIED... |
NGTD9R120F2SWK | ON Semicondu... | 0.41 $ | 1000 | DIODE GEN PURP 1.2KV DIED... |
NGTD13R120F2WP | ON Semicondu... | 0.69 $ | 1000 | DIODE GEN PURP 1.2KV DIED... |
NGTD15R65F2WP | ON Semicondu... | 0.71 $ | 1000 | DIODE GEN PURP 650V DIEDi... |
NGTD13R120F2SWK | ON Semicondu... | 0.71 $ | 1000 | DIODE GEN PURP 1.2KV DIED... |
NGTD15R65F2SWK | ON Semicondu... | 0.73 $ | 1000 | DIODE GEN PURP 650V DIEDi... |
NGTD17R120F2WP | ON Semicondu... | 0.84 $ | 1000 | DIODE GEN PURP 1.2KV DIED... |
NGTD17R120F2SWK | ON Semicondu... | 0.85 $ | 1000 | DIODE GEN PURP 1.2KV DIED... |
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