NGTD14T65F2SWK Discrete Semiconductor Products |
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| Allicdata Part #: | NGTD14T65F2SWK-ND |
| Manufacturer Part#: |
NGTD14T65F2SWK |
| Price: | $ 1.24 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | IGBT TRENCH FIELD STOP 650V DIE |
| More Detail: | IGBT Trench Field Stop 650V Surface Mount Die |
| DataSheet: | NGTD14T65F2SWK Datasheet/PDF |
| Quantity: | 1000 |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 188 +: | $ 1.12720 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Lead Free Status / RoHS Status: | -- |
| Part Status: | Active |
| IGBT Type: | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max): | 650V |
| Current - Collector Pulsed (Icm): | 120A |
| Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 35A |
| Switching Energy: | -- |
| Input Type: | Standard |
| Td (on/off) @ 25°C: | -- |
| Test Condition: | -- |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | Die |
| Supplier Device Package: | Die |
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IGBTs are power transistors that are used to switch high voltages and currents, connecting and disconnecting the power supply. The NGTD14T65F2SWK is a single IGBT that is used in many applications, primarily in the automotive industry. It is designed to handle high voltages up to 650V, up to 30A continuous current, and a peak current of 110A.
The IGBTs are divided into three levels: the main gate, the control gate and the reverse gate. The main gate is composed of two pins named G1 and G2. G1 is the emitter and G2 is the collector. The control gate is composed of two pins named D1 and D2. D1 is the source and D2 is the drain. The reverse gate is composed of two pins named R1 and R2. R1 is the gate and R2 is the substrate.
The working principle of the NGTD14T65F2SWK is that when the main gate voltage is non-zero, the NGTD14T65F2SWK will turn on and supply power to the load. Then the control gate can be used to increase or decrease the current through the NGTD14T65F2SWK. The reverse gate can be used to turn off the NGTD14T65F2SWK, by removing the power supply.
The NGTD14T65F2SWK is used in many applications, primarily in the automotive industry. It is used in hybrid and electric vehicles, in the traction system. The NGTD14T65F2SWK can be used to control the motor\'s power output, allowing for the efficient use of energy. It can also be used in power supplies for charging systems, allowing for the efficient charging of batteries. The NGTD14T65F2SWK can also be used in high-power switching applications, such as in renewable energy systems and lighting systems.
The NGTD14T65F2SWK is a reliable and efficient single IGBT. It is designed to handle high voltages up to 650V, up to 30A continuous current, and a peak current of 110A. It is a versatile IGBT that can be used in many different applications, primarily in the automotive industry. Its working principle is simple and reliable, and its design is robust, making it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| NGTD15R65F2WP | ON Semicondu... | 0.71 $ | 1000 | DIODE GEN PURP 650V DIEDi... |
| NGTD17T65F2SWK | ON Semicondu... | 1.46 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
| NGTD20T120F2SWK | ON Semicondu... | 1.72 $ | 1000 | IGBT TRENCH FIELD STOP 12... |
| NGTD30T120F2SWK | ON Semicondu... | 3.14 $ | 1000 | IGBT TRENCH FIELD STOP 12... |
| NGTD9R120F2SWK | ON Semicondu... | 0.41 $ | 1000 | DIODE GEN PURP 1.2KV DIED... |
| NGTD23T120F2SWK | ON Semicondu... | 2.07 $ | 1000 | IGBT TRENCH FIELD STOP 12... |
| NGTD5R65F2WP | ON Semicondu... | 0.24 $ | 1000 | DIODE GEN PURP 650V DIEDi... |
| NGTD13R120F2SWK | ON Semicondu... | 0.71 $ | 1000 | DIODE GEN PURP 1.2KV DIED... |
| NGTD8R65F2SWK | ON Semicondu... | 0.39 $ | 1000 | DIODE GEN PURP 650V DIEDi... |
| NGTD21T65F2WP | ON Semicondu... | 1.78 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
| NGTD9R120F2WP | ON Semicondu... | 0.41 $ | 1000 | DIODE GEN PURP 1.2KV DIED... |
| NGTD23T120F2WP | ON Semicondu... | 2.06 $ | 1000 | IGBT TRENCH FIELD STOP 12... |
| NGTD17R120F2WP | ON Semicondu... | 0.84 $ | 1000 | DIODE GEN PURP 1.2KV DIED... |
| NGTD14T65F2WP | ON Semicondu... | 1.23 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
| NGTD14T65F2SWK | ON Semicondu... | 1.24 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
| NGTD13T65F2WP | ON Semicondu... | 1.23 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
| NGTD8R65F2WP | ON Semicondu... | 0.38 $ | 1000 | DIODE GEN PURP 650V DIEDi... |
| NGTD28T65F2SWK | ON Semicondu... | 2.85 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
| NGTD5R65F2SWK | ON Semicondu... | 0.25 $ | 1000 | DIODE GEN PURP 650V DIEDi... |
| NGTD30T120F2WP | ON Semicondu... | 3.12 $ | 1000 | IGBT TRENCH FIELD STOP 12... |
| NGTD13T65F2SWK | ON Semicondu... | 1.24 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
| NGTD13R120F2WP | ON Semicondu... | 0.69 $ | 1000 | DIODE GEN PURP 1.2KV DIED... |
| NGTD21T65F2SWK | ON Semicondu... | 1.8 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
| NGTD15R65F2SWK | ON Semicondu... | 0.73 $ | 1000 | DIODE GEN PURP 650V DIEDi... |
| NGTD28T65F2WP | ON Semicondu... | 2.81 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
| NGTD17R120F2SWK | ON Semicondu... | 0.85 $ | 1000 | DIODE GEN PURP 1.2KV DIED... |
| NGTD17T65F2WP | ON Semicondu... | 1.44 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
| NGTD20T120F2WP | ON Semicondu... | 1.69 $ | 1000 | IGBT TRENCH FIELD STOP 12... |
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NGTD14T65F2SWK Datasheet/PDF