NGTD28T65F2WP Allicdata Electronics
Allicdata Part #:

NGTD28T65F2WP-ND

Manufacturer Part#:

NGTD28T65F2WP

Price: $ 2.81
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT TRENCH FIELD STOP 650V DIE
More Detail: IGBT Trench Field Stop 650V Surface Mount Die
DataSheet: NGTD28T65F2WP datasheetNGTD28T65F2WP Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
88 +: $ 2.56002
Stock 1000Can Ship Immediately
$ 2.81
Specifications
Series: --
Packaging: Bulk 
Lead Free Status / RoHS Status: --
Part Status: Active
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Switching Energy: --
Input Type: Standard
Td (on/off) @ 25°C: --
Test Condition: --
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Description

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Introduction

The NGTD28T65F2WP is a two-staged, full-bridge insulated gate bipolar transistor (IGBT) module. It has a low forward voltage, a high breakdown voltage, and is suitable for a wider range of applications than traditional transistors. This article will provide an overview of the NGTD28T65F2WP\'s application field and working principle.

Application Field

The NGTD28T65F2WP is suitable for a wide range of applications. Due to its low forward voltage and high breakdown voltage, it is suitable for high power switching applications such as motor control and power conditioning. It can be used to switch high-voltage DC power supplies and high-voltage AC supplies. Additionally, it can be used in solar inverters and automotive applications, due to its ability to handle high voltage at high frequency.

Working Principle

The NGTD28T65F2WP is a two-staged, full-bridge IGBT module. It works using an insulated gate, which generates an electric field when a voltage is applied. This electric field is used to control current flow through the transistor. When a suitable current is applied to the gate, the transistor opens and allows current to pass through. When the current is removed, the transistor closes and the current stops flowing.When used in a full-bridge configuration, the two transistors can be used to control current flow in both directions. This is useful for applications that require high voltage switching.

Conclusion

The NGTD28T65F2WP is a two-staged, full-bridge IGBT module with a low forward voltage and a high breakdown voltage. It is ideal for applications that require high voltage switching, such as motor control and power conditioning. Additionally, it is suitable for solar inverters and automotive applications. The working principle of the NGTD28T65F2WP is based on an insulated gate, which generates an electric field when a voltage is applied, allowing current to pass.

The specific data is subject to PDF, and the above content is for reference

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