
Allicdata Part #: | NGTD28T65F2WP-ND |
Manufacturer Part#: |
NGTD28T65F2WP |
Price: | $ 2.81 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT TRENCH FIELD STOP 650V DIE |
More Detail: | IGBT Trench Field Stop 650V Surface Mount Die |
DataSheet: | ![]() |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
88 +: | $ 2.56002 |
Specifications
Series: | -- |
Packaging: | Bulk |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Current - Collector Pulsed (Icm): | 200A |
Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 75A |
Switching Energy: | -- |
Input Type: | Standard |
Td (on/off) @ 25°C: | -- |
Test Condition: | -- |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | Die |
Supplier Device Package: | Die |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction
The NGTD28T65F2WP is a two-staged, full-bridge insulated gate bipolar transistor (IGBT) module. It has a low forward voltage, a high breakdown voltage, and is suitable for a wider range of applications than traditional transistors. This article will provide an overview of the NGTD28T65F2WP\'s application field and working principle.Application Field
The NGTD28T65F2WP is suitable for a wide range of applications. Due to its low forward voltage and high breakdown voltage, it is suitable for high power switching applications such as motor control and power conditioning. It can be used to switch high-voltage DC power supplies and high-voltage AC supplies. Additionally, it can be used in solar inverters and automotive applications, due to its ability to handle high voltage at high frequency.Working Principle
The NGTD28T65F2WP is a two-staged, full-bridge IGBT module. It works using an insulated gate, which generates an electric field when a voltage is applied. This electric field is used to control current flow through the transistor. When a suitable current is applied to the gate, the transistor opens and allows current to pass through. When the current is removed, the transistor closes and the current stops flowing.When used in a full-bridge configuration, the two transistors can be used to control current flow in both directions. This is useful for applications that require high voltage switching.Conclusion
The NGTD28T65F2WP is a two-staged, full-bridge IGBT module with a low forward voltage and a high breakdown voltage. It is ideal for applications that require high voltage switching, such as motor control and power conditioning. Additionally, it is suitable for solar inverters and automotive applications. The working principle of the NGTD28T65F2WP is based on an insulated gate, which generates an electric field when a voltage is applied, allowing current to pass.The specific data is subject to PDF, and the above content is for reference
Related Products
Search Part number : "NGTD" Included word is 28
Part Number | Manufacturer | Price | Quantity | Description |
---|
NGTD15R65F2WP | ON Semicondu... | 0.71 $ | 1000 | DIODE GEN PURP 650V DIEDi... |
NGTD17T65F2SWK | ON Semicondu... | 1.46 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
NGTD20T120F2SWK | ON Semicondu... | 1.72 $ | 1000 | IGBT TRENCH FIELD STOP 12... |
NGTD30T120F2SWK | ON Semicondu... | 3.14 $ | 1000 | IGBT TRENCH FIELD STOP 12... |
NGTD9R120F2SWK | ON Semicondu... | 0.41 $ | 1000 | DIODE GEN PURP 1.2KV DIED... |
NGTD23T120F2SWK | ON Semicondu... | 2.07 $ | 1000 | IGBT TRENCH FIELD STOP 12... |
NGTD5R65F2WP | ON Semicondu... | 0.24 $ | 1000 | DIODE GEN PURP 650V DIEDi... |
NGTD13R120F2SWK | ON Semicondu... | 0.71 $ | 1000 | DIODE GEN PURP 1.2KV DIED... |
NGTD8R65F2SWK | ON Semicondu... | 0.39 $ | 1000 | DIODE GEN PURP 650V DIEDi... |
NGTD21T65F2WP | ON Semicondu... | 1.78 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
NGTD9R120F2WP | ON Semicondu... | 0.41 $ | 1000 | DIODE GEN PURP 1.2KV DIED... |
NGTD23T120F2WP | ON Semicondu... | 2.06 $ | 1000 | IGBT TRENCH FIELD STOP 12... |
NGTD17R120F2WP | ON Semicondu... | 0.84 $ | 1000 | DIODE GEN PURP 1.2KV DIED... |
NGTD14T65F2WP | ON Semicondu... | 1.23 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
NGTD14T65F2SWK | ON Semicondu... | 1.24 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
NGTD13T65F2WP | ON Semicondu... | 1.23 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
NGTD8R65F2WP | ON Semicondu... | 0.38 $ | 1000 | DIODE GEN PURP 650V DIEDi... |
NGTD28T65F2SWK | ON Semicondu... | 2.85 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
NGTD5R65F2SWK | ON Semicondu... | 0.25 $ | 1000 | DIODE GEN PURP 650V DIEDi... |
NGTD30T120F2WP | ON Semicondu... | 3.12 $ | 1000 | IGBT TRENCH FIELD STOP 12... |
NGTD13T65F2SWK | ON Semicondu... | 1.24 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
NGTD13R120F2WP | ON Semicondu... | 0.69 $ | 1000 | DIODE GEN PURP 1.2KV DIED... |
NGTD21T65F2SWK | ON Semicondu... | 1.8 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
NGTD15R65F2SWK | ON Semicondu... | 0.73 $ | 1000 | DIODE GEN PURP 650V DIEDi... |
NGTD28T65F2WP | ON Semicondu... | 2.81 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
NGTD17R120F2SWK | ON Semicondu... | 0.85 $ | 1000 | DIODE GEN PURP 1.2KV DIED... |
NGTD17T65F2WP | ON Semicondu... | 1.44 $ | 1000 | IGBT TRENCH FIELD STOP 65... |
NGTD20T120F2WP | ON Semicondu... | 1.69 $ | 1000 | IGBT TRENCH FIELD STOP 12... |
Latest Products
IKW03N120H2FKSA1
IGBT 1200V 9.6A 62.5W TO247-3IGBT 1200V...

AUXKNG4PH50S-215
IGBT 1200V TO247-3IGBT

AUIRG4PH50S-205
IGBT 1200V TO247-3IGBT 1200V 57A 200W T...

AUXMIGP4063D
IGBT 600V TO-247 COPAKIGBT

FGD3N60LSDTM-T
INTEGRATED CIRCUITIGBT 600V 6A 40W Surf...

IXGM40N60AL
POWER MOSFET TO-3IGBT
